Publikationen von Jörg Neugebauer

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.; Van de Walle, C. G.: Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), S. 3097 - 3100 (1998)

Northrup, J. E.; Neugebauer, J.: Possibility of a Mott-Hubbard ground state for the SiC(0001) surface. Physical Review B 57 (8), S. R4230 - R4232 (1998)

Schwarz, G.; Kley, A.; Neugebauer, J.; Neugebauer, J.; Scheffler, M.: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, S. 1392 - 1400 (1998)

Van de Walle, C. G.; Stampfl, C.; Neugebauer, J.: Theory of doping and defects in III-V nitrides. Journal of Crystal Growth 189/190, S. 505 - 510 (1998)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), S. 487 - 489 (1998)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.; Northrup, J. E.: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, S. 112 - 124 (1998)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.; Northrup, J. E.; Van de Walle, C. G.: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998)

Bockstedte, M.; Kley, A.; Neugebauer, J.; Scheffler, M.: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), S. 187 - 222 (1997)

Northrup, J. E.; Di Felice, R.; Neugebauer, J.: Atomic structure and stability of AIN(0001) and (0001) surfaces. Physical Review B 55 (20), S. 13878 - 13883 (1997)

Northrup, J. E.; Di Felice, R.; Neugebauer, J.: Energetics of H and NH₂ on GaN(101̅0) and implications for the origin of nanopipe defects. Physical Review B 56 (8), S. R4325 - R4328 (1997)

Smith, A. R.; Feenstra, R. M.; Greve, D. W.; Neugebauer, J.; Northrup, J. E.: Reconstructions of the GaN(0001‾) surface. Physical Review Letters 79 (20), S. 3934 - 3937 (1997)

Van de Walle, C. G.; Neugebauer, J.: Small valence-band offsets at GaN/InGaN heterojunctions. Applied Physics Letters 70 (19), S. 2577 - 2579 (1997)

Van de Walle, C. G.; Neugebauer, J.: Defects and doping in III-V nitrides. Materials Science Forum 258-263, S. 19 - 26 (1997)

Di Felice, R.; Northrup, J. E.; Neugebauer, J.: Energetics of AIN thin films and the implications for epitaxial growth on SiC. Physical Review B 54 (24), S. R17351 - R17354 (1996)

Kley, A.; Neugebauer, J.; Scheffler, M.: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors, S. 775 - 782 (1995)

Bormet, J.; Neugebauer, J.; Scheffler, M.: Chemical trends and bonding mechanisms for isolated adsorbates on Al(111). Physical Review B 49 (24), S. 17242 - 17252 (1994)

Neugebauer, J.; Scheffler, M.: Alkali-metal adsorbates on aluminum (111): The interplay and competition of adsorbate-substrate and adsorbate-adsorbate interactions. Progress in Surface Science 46 (2-3), S. 295 - 304 (1994)

Stampfl, C.; Neugebauer, J.; Scheffler, M.: Alkali-metal adsorption on Al(111) and Al(100). Surface Science 307-309 (Part A), S. 8 - 15 (1994)

Stampfl, C.; Neugebauer, J.; Scheffler, M.: Theoretical evidence for unusual bonding geometry and phase transitions of Na on Al(001). Surface Review and Letters 1 (2-3), S. 213 - 219 (1994)

Neugebauer, J.; Scheffler, M.: Theory of adsorption and desorption in high electric fields. Surface Science 287/288 (2), S. 572 - 576 (1993)