Publikationen von Michel Bockstedte

Fuchs, M.; Bockstedte, M.; Pehlke, E.; Scheffler, M.: Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange correlation. Physical Review B 57 (4), S. 2134 - 2145 (1998)

Bockstedte, M.; Kley, A.; Neugebauer, J.; Scheffler, M.: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), S. 187 - 222 (1997)

Bockstedte, M.; Scheffler, M.: Theory of Self-Diffusion in GaAs. Zeitschrift für Physikalische Chemie 200 (1-2), S. 195 - 207 (1997)

Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio molecular dynamics study of the desorption of D₂ from Si(100). Physical Review Letters 79 (4), S. 701 - 704 (1997)

Moll, N.; Bockstedte, M.; Fuchs, M.; Pehlke, E.; Scheffler, M.: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, S. 2550 - 2556 (1995)

Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 951 - 954 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Bockstedte, M.: Diffusion der Gallium-Leerstelle in Gallium-Arsenid. Dissertation, Universität, Erlangen-Nürnberg (1999)