Publikationen von Tosja K. Zywietz

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.; Chen, H.; Feenstra, R. M.: Adatom kinetics on and below the surface: The existence of a new diffusion channel. Physical Review Letters 90 (5), S. 056101-1 - 056101-4 (2003)

Chen, H.; Feenstra, R. M.; Northrup, J. E.; Zywietz, T. K.; Neugebauer, J.; Greve, D. W.: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), S. 1902 - 1905 (2000)

Chen, H.; Feenstra, R. M.; Northrup, J.; Zywietz, T. K.; Neugebauer, J.; Greve, D. W.: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), S. 2284 - 2289 (2000)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J.: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, S. 355 - 359 (2000)

Feenstra, R. M.; Chen, H.; Ramachandran, V.; Lee, C. D.; Smith, A. R.; Northrup, J. E.; Zywietz, T. K.; Neugebauer, J.; Greve, D. W.: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), S. 601 - 606 (2000)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), S. 1695 - 1697 (1999)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.; Van de Walle, C. G.: Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), S. 3097 - 3100 (1998)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), S. 487 - 489 (1998)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.; Northrup, J. E.: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, S. 112 - 124 (1998)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.; Northrup, J. E.; Van de Walle, C. G.: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998, S. 235 - 242 (Hg. Gershoni, D.). 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Zywietz, T. K.: Dichte-Funktional-Theorie der thermodynamischen und kinetischen Eigenschaften polarer Galliumnitrid-Oberflächen. Dissertation, Technische Universität Berlin, Berlin (1999)