Publikationen von Jörg Neugebauer

Neugebauer, J.; Scheffler, M.: Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters 71 (4), S. 577 - 580 (1993)

Scheffler, M.; Neugebauer, J.; Stumpf, R.: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, S. A91 - A94 (1993)

Wenzien, B.; Bormet, J.; Neugebauer, J.; Scheffler, M.: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, S. 559 - 563 (1993)

Neugebauer, J.; Scheffler, M.: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), S. 16067 - 16080 (1992)

Schmalz, A.; Aminpirooz, S.; Becker, L.; Haase, J.; Neugebauer, J.; Scheffler, M.; Batchelor, D. R.; Adams, D. L.; Bogh, E.: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, S. 2163 - 2166 (1991)

Northrup, J. E.; Neugebauer, J.; Look, D. C.; Chichibu, S. F.; Riechert, H. (Hg.): GaN and related alloys—2001. Materials Research Society, Warrendale, PA (2002), 860 S.

Neugebauer, J.: Surface structure and adatom kinetics of group-III nitrides. In: Nitride Semiconductors: Handbook on Materials and Devices, S. 295 - 318 (Hg. Ruterana, P.; Albrecht, M.). WILEY-VCH, Weinheim (2003)

Limpijumnong, S.; Van de Walle, C. G.; Neugebauer, J.: Stability, diffusion, and complex formation of beryllium in wurtzite GaN. In: GaN and Related Alloys - 2000, S. G4.3 (Hg. Wetzel, C.; Gil, B.). MRS, Pittsburgh (2001)

Schwarz, G.; Neugebauer, J.; Scheffler, M.: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000, S. 1377 - 1380 (Hg. Miura, N.; Ando, T.). Springer, Berlin (2001)

Grosse, F.; Neugebauer, J.: Modeling of structural and elastic properties of In_xGa_1-xN alloys. In: Materials Issues and Modeling for Device Nanofabrication, S. 215 - 222 (Hg. Merhari, L.; Wille, L. T.; Gonsalves, K. E.; Gyure, M. F.; Matsui, S. et al.). Materials Research Society, Warrendale, PA (2000)

Neugebauer, J.; Van de Walle, C. G.: Theory of hydrogen in GaN. In: Hydrogen in semiconductors II, S. 479 - 502 (Hg. Nickel, N. H.). Acad. Press, Boston (1999)

Van de Walle, C. G.; Johnson, N. M.; Neugebauer, J.: Hydrogen and acceptor compensation in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, S. 317 - 321 (Hg. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC (1999)

Van de Walle, C. G.; Neugebauer, J.: Yellow luminescence in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, S. 313 - 316 (Hg. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC (1999)

Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, S. 275 - 280 (Hg. Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.) (1999)

Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.: Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors, S. 281 - 283 (Hg. Edgar, J. H.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.). INSPEC, London (1999)

Lee, C. D.; Feenstra, R. M.; Northrup, J. E.; Lymperakis, L.; Neugebauer, J.: Morphology and surface reconstructions of m-plane GaN. In: GaN and Related Alloys, S. L.4.1.1 (Hg. Wetzel, C.). MRS Fall Meeting: Symposium L – GaN and Related Alloys. Materials Research Society, Pittsburgh, Pa. (2003)

Van de Walle, C. G.; Northrup, J. E.; Neugebauer, J.: Effects on stoichiometry on point defects and impurities in gallium nitride. In: Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds, S. 11 - 18 (Hg. Specht, P.; Weatherford, T.R.; Kiesel, P.; Marek, T.; Malzer, S.). 4th Symposium on Non-Stoichiometric III-V Compounds, Asilomar, CA, U.S.A., 02. Oktober 2002 - 04. Oktober 2002. University of Erlangen, Erlangen, Germany (2002)

Grosse, F.; Neugebauer, J.; Scheffler, M.: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999 (Hg. David, G.). International Conference on the Physics of Semiconductors 1999, Jerusalem, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998, S. 235 - 242 (Hg. Gershoni, D.). 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Van de Walle, C. G.; Neugebauer, J.: Theory of point defects and interfaces. In: MRS Proceedings, Bd. 449, S. 861 - 870. Symposium N – III-V Nitrides. (1997)