Publikationen von Jörg Neugebauer

Lymperakis, L.; Neugebauer, J.; Albrecht, M.; Remmele, T.; Strunk, H. P.: Strain induced deep electronic states around threading dislocations in GaN. Physical Review Letters 93 (19), 196401 (2004)

Lee, C. D.; Dong, Y.; Feenstra, R. M.; Northrup, J. E.; Neugebauer, J.: Reconstructions of the AlN(0001) surface. Physical Review B 68, S. 205317-1 - 205317-11 (2003)

Neugebauer, J.: Surfactants and antisurfactants on group-III-nitride surfaces. Physica Status Solidi (C) 0 (6), S. 1651 - 1667 (2003)

Schwarz, G.; Kley, A.; Neugebauer, J.; Neugebauer, J.; Scheffler, M.: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, S. 1392 - 1400 (1998)

Ruterana, P.; Albrecht, M.; Neugebauer, J. (Hg.): Nitride Semiconductors: Handbook on Materials and Devices. WILEY-VCH, Weinheim (2003), 664 S.