Publikationen von Alexander Kley

Jacobi, K.; Platen, J.; Setzer, C.; Márquez, J.; Geelhaar, L.; Meyne, C.; Richter, W.; Kley, A.; Ruggerone, P.; Scheffler, M.: Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (112)B surfaces. Surface Science 439 (1-3), S. 59 - 72 (1999)

Geelhaar, L.; Márquez, J.; Jacobi, K.; Kley, A.; Ruggerone, P.; Scheffler, M.: A scanning tunneling microscopy study of the GaAs(112) surfaces. Microelectronics Journal 30 (4-5), S. 393 - 396 (1999)

Platen, J.; Kley, A.; Setzer, C.; Jacobi, K.; Ruggerone, P.; Scheffler, M.: The importance of high-index surfaces for the morphology of GaAs quantum dots. Journal of Applied Physics 85 (7), S. 3597 - 3601 (1999)

Mirbt, S.; Moll, N.; Kley, A.; Joannopoulos, J. D.: A general rule for surface reconstructions of III-V semiconductors. Surface Science 422 (1-3), S. L177 - L182 (1999)

Ruggerone, P.; Kley, A.; Scheffler, M.: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Comments on Condensed Matter Physics 18, S. 261 - 277 (1998)

Schwarz, G.; Kley, A.; Neugebauer, J.; Neugebauer, J.; Scheffler, M.: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, S. 1392 - 1400 (1998)

Shkrebtii, A. I.; Esser, N.; Richter, W.; Schmidt, W. G.; Bechstedt, F.; Fimland, B. O.; Kley, A.; Del Sole, R.: Reflectance anisotropy of GaAs(100): Theory and experiment. Physical Review Letters 81 (3), S. 721 - 724 (1998)

Bockstedte, M.; Kley, A.; Neugebauer, J.; Scheffler, M.: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), S. 187 - 222 (1997)

Kley, A.; Ruggerone, P.; Scheffler, M.: Novel diffusion mechanism on the GaAs (001) surface: the role of adatom-dimer interaction. Physical Review Letters 79 (26), S. 5278 - 5281 (1997)

Pehlke, E.; Moll, N.; Kley, A.; Scheffler, M.: Shape and stability of quantum dots. Applied Physics A 65 (6), S. 525 - 534 (1997)

Ruggerone, P.; Kley, A.; Scheffler, M.: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Psi-k Newsletter 21, S. 75 - 87 (1997)

Ruggerone, P.; Kley, A.; Scheffler, M.: Microscopic aspects of homoepitaxial growth. Progress in Surface Science 54 (3-4), S. 331 - 340 (1997)

Moll, N.; Kley, A.; Pehlke, E.; Scheffler, M.: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), S. 8844 - 8855 (1996)

Kley, A.; Neugebauer, J.; Scheffler, M.: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors, S. 775 - 782 (1995)

Kley, A.; Neugebauer, J.: Atomic and electronic interface structure of the GaAs/ZnSe (001) interface. Physical Review B 50 (12), S. 8616 - 8628 (1994)

Grosse, F.; Kley, A.; Scheffler, M.; Zimmermann, R.: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors (Hg. Gershoni, D.). Internatinal Conference on the Physics of Semiconductors, Jerusalem, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Ruggerone, P.; Kley, A.; Scheffler, M.: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science, S. 33 - 42 (Hg. Fiorentini, V.). Italian Swiss Workshop on Advances in Computational Materials Science, Cagliari, 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Kley, A.; Scheffler, M.: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 1031 - 1034 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. (1996)

Kley, A.: Theoretische Untersuchungen zur Adatomdiffusion auf niederindizierten Oberflächen von GaAs. Dissertation, Technische Universität Berlin, Berlin (1997)

Kley, A.: Gesamtenergierechnungen zur GaAs/ZnSe(001) Heterogrenzfläche. Diplom, Humboldt-Universität zu Berlin, Berlin (1992)