Publikationen von Matthias Scheffler

Grosse, F.; Kley, A.; Scheffler, M.; Zimmermann, R.: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors (Hg. Gershoni, D.). Internatinal Conference on the Physics of Semiconductors, Jerusalem, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Grosse, F.; Neugebauer, J.; Scheffler, M.: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999 (Hg. David, G.). International Conference on the Physics of Semiconductors 1999, Jerusalem, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J. E.: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998, S. 235 - 242 (Hg. Gershoni, D.). 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, 02. August 1998 - 07. August 1998. World Scientific, Singapore (1999)

Groß, A.; Scheffler, M.: Steering and Isotope Effects in the Dissociative Adsorption of H₂/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996, S. 285 - 292 (Hg. Kumar, V.; Sengupta, S.; Raj, B.). Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20. August 1996 - 23. August 1996. Springer, Berlin (1997)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science, S. 23 - 32 (Hg. Fiorentini, V.; Meloni, F.). VI Italian-Swiss Workshop on, S. Margherita di Pula, (Cagliari), 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Petersen, M.; Ruggerone, P.; Scheffler, M.: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science, S. 43 - 52 (Hg. Fiorentini, V.). Italian Swiss Workshop Advances in Computational Science, Cagliari, 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Ruggerone, P.; Kley, A.; Scheffler, M.: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science, S. 33 - 42 (Hg. Fiorentini, V.). Italian Swiss Workshop on Advances in Computational Materials Science, Cagliari, 28. September 1996 - 02. Oktober 1996. Italian Physical Society, Bologna (1997)

Groß, A.; Bockstedte, M.; Scheffler, M.: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 951 - 954 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Kley, A.; Scheffler, M.: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings], S. 1031 - 1034 (Hg. Scheffler, M.). International Conference on the Physics of Semiconductors (ICPS), Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. (1996)

Pehlke, E.; Moll, N.; Scheffler, M.: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors, S. 1301 - 1304 (Hg. Zimmermann, R.). International Conference on the Physics of Semiconductors, Berlin, Germany, 21. Juli 1996 - 26. Juli 1996. World Scientific, Singapore (1996)

Ruggerone, P.; Kohler, B.; Wilke, S.; Scheffler, M.: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems, S. 113 - 126 (Hg. Bertel, E.). 134th W.-E.-Heraeus-Seminar, Honnef, 17. Oktober 1994 - 20. Oktober 1994. World Scientific, Singapore (1995)

Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, S. 297 - 300 (Hg. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, 14. Juni 1993 - 18. Juni 1993. World Scientific, Singapore (1994)

Oppo, S.; Fiorentini, V.; Scheffler, M.: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings, Bd. 317, S. 323 - 328. Materials Research Society, New York (1994)

Dabrowski, J.; Pehlke, E.; Scheffler, M.: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992, S. 389 - 392 (Hg. Jiang, P.; Zheng, H.-Z.). 21st International Conference on the Physics of Semiconductors (ICPS-21), Beijing, China, 10. August 1992 - 14. August 1992. World Scientific, Singapore (1992)

Máca, F.; Scheffler, M.; Berndt, W.: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces, S. 195 - 198. (1985)

Bernholc, J.; Lipari, N. O.; Pantelides, S. T.; Scheffler, M.: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors, S. 1 - 17 (Hg. Hasiguti, R. R.). 11th International Conference on Defects and Radiation Effects in Semiconductors, Oiso, Japan, 08. September 1980 - 11. September 1980. Institute of Physics, London (1981)

Scheffler, M.; Kambe, K.; Forstmann, F.; Jacobi, K.: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations). In: Proceedings of the 7th International Vacuum Congress and the 3rd International Conference on Solid Surfaces of the International Union for Vacuum Science, Technique and Applications, S. 2223 - 2226 (Hg. Dobrozemsky, R.). 7th International Vacuum Congress, Vienna, Austria, 12. September 1977 - 16. September 1977. (1977)

Scheffler, M.; Kambe, K.; Forstmann, F.: Energy and angle-resolved photoemission. In: Proceedings International Symposium on Photoemission, S. 227 (Hg. R.F. Willis, R.F.; Feuerbacher, B.; Fitton, B.; Backx, C.). ESA, Paris, France (1976)

Scheffler, M.: Artificial Intelligence for Materials Science. DPG Spring Meeting 2025, Regensburg, Germany (2025)

Scheffler, M.: Discovery of Novel Memristor Materials by Artificial Intelligence. AWASES Merck-Intel Workshop, Merck , Darmstadt, Germany (2025)