Publikationen von Martina Heinemann

Ourmazd, A.; Scheffler, M.; Heinemann, M.; Rouviere, J.-L.: Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, S. 24 - 31 (1992)

Heinemann, M.; Scheffler, M.: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, S. 628 - 631 (1992)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, S. 1031 - 1034 (1991)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), S. 215 - 218 (1990)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, S. 71 - 75 (1990)

Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, S. 297 - 300 (Hg. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, 14. Juni 1993 - 18. Juni 1993. World Scientific, Singapore (1994)

Heinemann, M.: Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen. Dissertation, TU, Berlin (1991)