Publications of Jutta Platen

Geng, P., J. Márquez, L. Geelhaar, J. Platen, C. Setzer and K. Jacobi: A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces. Review of Scientific Instruments 71 (2), 504–508 (2000).

Setzer, C., J. Platen, W. Ranke and K. Jacobi: Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1¯1¯3¯)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing. Surface Science 419 (2-3), 291–302 (1999).

Pristovsek, M., H. Menhal, T. Wehnert, J.-T. Zettler, T. Schmidtling, N.N. Esser, W. Richter, C. Setzer, J. Platen and K. Jacobi: Reconstructions of the GaAs (1 1 3) surface. Journal of Crystal Growth 195 (1-4), 1–5 (1998).

Setzer, C., J. Platen, H. Bludau, M. Gierer, H. Over and K. Jacobi: LEED intensity and surface core level shift analysis ofthe MBE-prepared GaAs (1 ̅1 ̅1 ̅)B(2×2 ) surface. Surface Science 402-404, 782–785 (1998).

Setzer, C., J. Platen, P. Geng, W. Ranke and K. Jacobi: Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface. Surface Science 377–379, 125–129 (1997).

Platen, J., C. Setzer, P. Geng, W. Ranke and K. Jacobi: Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces. Microelectronics Journal 28 (8-10), 969–976 (1997).

Ranke, W. and J. Platen: Electronic and geometric structure of NH₃ on Ge(001) under equilibrium adsorption conditions. Physical Review B 54 (4), 2873–2879 (1996).

Ranke, W. and J. Platen: NH₃-induced c(4 × 2) to (2 × 2) transition on the Ge(001) surface by a domino-like dimer flip. Surface Science 349 (3), L159–L163 (1996).