Publikationen von Jutta Platen

Geng, P.; Márquez, J.; Geelhaar, L.; Platen, J.; Setzer, C.; Jacobi, K.: A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces. Review of Scientific Instruments 71 (2), S. 504 - 508 (2000)

Setzer, C.; Platen, J.; Ranke, W.; Jacobi, K.: Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1¯1¯3¯)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing. Surface Science 419 (2-3), S. 291 - 302 (1999)

Pristovsek, M.; Menhal, H.; Wehnert, T.; Zettler, J.-T.; Schmidtling, T.; Esser, N. N.; Richter, W.; Setzer, C.; Platen, J.; Jacobi, K.: Reconstructions of the GaAs (1 1 3) surface. Journal of Crystal Growth 195 (1-4), S. 1 - 5 (1998)

Setzer, C.; Platen, J.; Bludau, H.; Gierer, M.; Over, H.; Jacobi, K.: LEED intensity and surface core level shift analysis ofthe MBE-prepared GaAs (1 ̅1 ̅1 ̅)B(2×2 ) surface. Surface Science 402-404, S. 782 - 785 (1998)

Setzer, C.; Platen, J.; Geng, P.; Ranke, W.; Jacobi, K.: Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface. Surface Science 377–379, S. 125 - 129 (1997)

Platen, J.; Setzer, C.; Geng, P.; Ranke, W.; Jacobi, K.: Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces. Microelectronics Journal 28 (8-10), S. 969 - 976 (1997)

Ranke, W.; Platen, J.: Electronic and geometric structure of NH₃ on Ge(001) under equilibrium adsorption conditions. Physical Review B 54 (4), S. 2873 - 2879 (1996)

Ranke, W.; Platen, J.: NH₃-induced c(4 × 2) to (2 × 2) transition on the Ge(001) surface by a domino-like dimer flip. Surface Science 349 (3), S. L159 - L163 (1996)