Publikationen von Jörg Neugebauer

Neugebauer, J., T.K. Zywietz, M. Scheffler, J.E. Northrup und C.G. Van de Walle: Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), 3097–3100 (1998).

Northrup, J.E. und J. Neugebauer: Possibility of a Mott-Hubbard ground state for the SiC(0001) surface. Physical Review B 57 (8), R4230–R4232 (1998).

Schwarz, G., A. Kley, J. Neugebauer, J. Neugebauer und M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).

Van de Walle, C.G., C. Stampfl und J. Neugebauer: Theory of doping and defects in III-V nitrides. Journal of Crystal Growth 189/190, 505–510 (1998).

Zywietz, T.K., J. Neugebauer und M. Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), 487–489 (1998).

Zywietz, T.K., J. Neugebauer, M. Scheffler und J.E. Northrup: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, 112–124 (1998).

Zywietz, T.K., J. Neugebauer, M. Scheffler, J.E. Northrup und C.G. Van de Walle: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998).

Bockstedte, M., A. Kley, J. Neugebauer und M. Scheffler: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), 187–222 (1997).

Northrup, J.E., R. Di Felice und J. Neugebauer: Atomic structure and stability of AIN(0001) and (0001) surfaces. Physical Review B 55 (20), 13878–13883 (1997).

Northrup, J.E., R. Di Felice und J. Neugebauer: Energetics of H and NH₂ on GaN(101̅0) and implications for the origin of nanopipe defects. Physical Review B 56 (8), R4325–R4328 (1997).

Smith, A.R., R.M. Feenstra, D.W. Greve, J. Neugebauer und J.E. Northrup: Reconstructions of the GaN(0001‾) surface. Physical Review Letters 79 (20), 3934–3937 (1997).

Van de Walle, C.G. und J. Neugebauer: Small valence-band offsets at GaN/InGaN heterojunctions. Applied Physics Letters 70 (19), 2577–2579 (1997).

Van de Walle, C.G. und J. Neugebauer: Defects and doping in III-V nitrides. Materials Science Forum 258-263, 19–26 (1997).

Di Felice, R., J.E. Northrup und J. Neugebauer: Energetics of AIN thin films and the implications for epitaxial growth on SiC. Physical Review B 54 (24), R17351–R17354 (1996).

Kley, A., J. Neugebauer und M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).

Bormet, J., J. Neugebauer und M. Scheffler: Chemical trends and bonding mechanisms for isolated adsorbates on Al(111). Physical Review B 49 (24), 17242–17252 (1994).

Neugebauer, J. und M. Scheffler: Alkali-metal adsorbates on aluminum (111): The interplay and competition of adsorbate-substrate and adsorbate-adsorbate interactions. Progress in Surface Science 46 (2-3), 295–304 (1994).

Stampfl, C., J. Neugebauer und M. Scheffler: Alkali-metal adsorption on Al(111) and Al(100). Surface Science 307-309 (Part A), 8–15 (1994).

Stampfl, C., J. Neugebauer und M. Scheffler: Theoretical evidence for unusual bonding geometry and phase transitions of Na on Al(001). Surface Review and Letters 1 (2-3), 213–219 (1994).

Neugebauer, J. und M. Scheffler: Theory of adsorption and desorption in high electric fields. Surface Science 287/288 (2), 572–576 (1993).