Publikationen von Jörg Neugebauer

Neugebauer, J. und M. Scheffler: Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters 71 (4), 577–580 (1993).

Scheffler, M., J. Neugebauer und R. Stumpf: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, A91–A94 (1993).

Wenzien, B., J. Bormet, J. Neugebauer und M. Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, 559–563 (1993).

Neugebauer, J. und M. Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), 16067–16080 (1992).

Schmalz, A., S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams und E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

Northrup, J.E., J. Neugebauer, D.C. Look, S.F. Chichibu und H. Riechert (Hrsg.): GaN and related alloys—2001. (MRS Symposium Proceedings, Bd. 693). Materials Research Society, Warrendale, PA (2002).

Neugebauer, J.: Surface structure and adatom kinetics of group-III nitrides. In: Nitride Semiconductors: Handbook on Materials and Devices. (Eds.): J. Neugebauer. (Hrsg.): P. Ruterana und M. Albrecht. WILEY-VCH, Weinheim, 295–318 (2003).

Limpijumnong, S., C.G. Van de Walle und J. Neugebauer: Stability, diffusion, and complex formation of beryllium in wurtzite GaN. In: GaN and Related Alloys - 2000. (Eds.): M.S. Shur, U.K. Mishra, und K. Katsumi. (Hrsg.): C. Wetzel und B. Gil. (Materials Reserach Society Symposium Proceedings, Vol. 639). MRS, Pittsburgh, G4.3 (2001).

Schwarz, G., J. Neugebauer und M. Scheffler: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000. (Hrsg.): N. Miura und T. Ando. (Springer proceedings in physics, Vol. 87). Springer, Berlin, 1377–1380 (2001).

Grosse, F. und J. Neugebauer: Modeling of structural and elastic properties of In_xGa_1-xN alloys. In: Materials Issues and Modeling for Device Nanofabrication. (Hrsg.): L. Merhari, L.T. Wille, K.E. Gonsalves, M.F. Gyure, S. Matsui, und L.J. Whitman. (Materials Research Society Symposium Proceedings, Vol. 584). Materials Research Society, Warrendale, PA, 215–222 (2000).

Neugebauer, J. und C.G. Van de Walle: Theory of hydrogen in GaN. In: Hydrogen in semiconductors II. (Hrsg.): N.H. Nickel. (Semiconductors and semimetals, Vol. 61). Acad. Press, Boston, 479–502 (1999).

Van de Walle, C.G., N.M. Johnson und J. Neugebauer: Hydrogen and acceptor compensation in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Hrsg.): S. Strite, I. Akasaki, H. Amano, und C. Wetzel. (EMIS datareview series, Vol. 23). INSPEC, , 317–321 (1999).

Van de Walle, C.G. und J. Neugebauer: Yellow luminescence in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Hrsg.): S. Strite, I. Akasaki, H. Amano, und C. Wetzel. (EMIS datareview series, Vol. 23). INSPEC, , 313–316 (1999).

Van de Walle, C.G., J. Neugebauer und C. Stampfl: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Hrsg.): S. Strite, I. Akasaki, H. Amano, und C. Wetzel. (EMIS datareview series, Vol. 23)., 275–280 (1999).

Van de Walle, C.G., J. Neugebauer und C. Stampfl: Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors. (Hrsg.): J.H. Edgar, S. Strite, I. Akasaki, H. Amano, und C. Wetzel. (EMIS datareview series, Vol. 23). INSPEC, London, 281–283 (1999).

Lee, C.D., R.M. Feenstra, J.E. Northrup, L. Lymperakis und J. Neugebauer: Morphology and surface reconstructions of m-plane GaN. In: GaN and Related Alloys. (Hrsg.): C. Wetzel. (Materials Research Society Symposium Proceedings, Vol. 743). Materials Research Society, Pittsburgh, Pa., L.4.1.1 (2003).

Van de Walle, C.G., J.E. Northrup und J. Neugebauer: Effects on stoichiometry on point defects and impurities in gallium nitride. In: Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds. (Hrsg.): P. Specht, T.R. Weatherford, P. Kiesel, T. Marek, und S. Malzer. (Physics of Microstructured Semiconductors). University of Erlangen, Erlangen, Germany, 11–18 (2002).

Grosse, F., J. Neugebauer und M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Hrsg.): G. David. World Scientific, Singaporeim Druck

Neugebauer, J., T.K. Zywietz, M. Scheffler und J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Hrsg.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).

Van de Walle, C.G. und J. Neugebauer: Theory of point defects and interfaces. In: MRS Proceedings., 861–870 (1997).