Publikationen von Tosja K. Zywietz

Neugebauer, J., T.K. Zywietz, M. Scheffler, J.E. Northrup, H. Chen und R.M. Feenstra: Adatom kinetics on and below the surface: The existence of a new diffusion channel. Physical Review Letters 90 (5), 056101–1-056101–4 (2003).

Chen, H., R.M. Feenstra, J. Northrup, T.K. Zywietz, J. Neugebauer und D.W. Greve: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), 2284–2289 (2000).

Chen, H., R.M. Feenstra, J.E. Northrup, T.K. Zywietz, J. Neugebauer und D.W. Greve: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), 1902–1905 (2000).

Feenstra, R.M., H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, T.K. Zywietz, J. Neugebauer und D.W. Greve: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), 601–606 (2000).

Neugebauer, J., T.K. Zywietz, M. Scheffler und J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).

Zywietz, T.K., J. Neugebauer und M. Scheffler: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), 1695–1697 (1999).

Neugebauer, J., T.K. Zywietz, M. Scheffler, J.E. Northrup und C.G. Van de Walle: Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), 3097–3100 (1998).

Zywietz, T.K., J. Neugebauer und M. Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), 487–489 (1998).

Zywietz, T.K., J. Neugebauer, M. Scheffler und J.E. Northrup: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, 112–124 (1998).

Zywietz, T.K., J. Neugebauer, M. Scheffler, J.E. Northrup und C.G. Van de Walle: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998).

Neugebauer, J., T.K. Zywietz, M. Scheffler und J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Hrsg.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).

Zywietz, T.K.: Dichte-Funktional-Theorie der thermodynamischen und kinetischen Eigenschaften polarer Galliumnitrid-Oberflächen. Technische Universität Berlin Berlin