Publikationen von Jörg Neugebauer

Lymperakis, L., J. Neugebauer, M. Albrecht, T. Remmele und H.P. Strunk: Strain induced deep electronic states around threading dislocations in GaN. Physical Review Letters 93 (19), 196401 (2004).

Lee, C.D., Y. Dong, R.M. Feenstra, J.E. Northrup und J. Neugebauer: Reconstructions of the AlN(0001) surface. Physical Review B 68, 205317–1-205317–11 (2003).

Neugebauer, J.: Surfactants and antisurfactants on group-III-nitride surfaces. Physica Status Solidi (C) 0 (6), 1651–1667 (2003).

Schwarz, G., A. Kley, J. Neugebauer, J. Neugebauer und M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).

Ruterana, P., M. Albrecht und J. Neugebauer (Hrsg.): Nitride Semiconductors: Handbook on Materials and Devices. 1st edition WILEY-VCH, Weinheim (2003).