Publikationen von Alexander Kley

Geelhaar, L., J. Márquez, K. Jacobi, A. Kley, P. Ruggerone und M. Scheffler: A scanning tunneling microscopy study of the GaAs(112) surfaces. Microelectronics Journal 30 (4-5), 393–396 (1999).

Jacobi, K., J. Platen, C. Setzer, J. Márquez, L. Geelhaar, C. Meyne, W. Richter, A. Kley, P. Ruggerone und M. Scheffler: Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (112)B surfaces. Surface Science 439 (1-3), 59–72 (1999).

Mirbt, S., N. Moll, A. Kley und J.D. Joannopoulos: A general rule for surface reconstructions of III-V semiconductors. Surface Science 422 (1-3), L177–L182 (1999).

Platen, J., A. Kley, C. Setzer, K. Jacobi, P. Ruggerone und M. Scheffler: The importance of high-index surfaces for the morphology of GaAs quantum dots. Journal of Applied Physics 85 (7), 3597–3601 (1999).

Ruggerone, P., A. Kley und M. Scheffler: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Comments on Condensed Matter Physics 18, 261–277 (1998).

Schwarz, G., A. Kley, J. Neugebauer, J. Neugebauer und M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).

Shkrebtii, A.I., N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley und R. Del Sole: Reflectance anisotropy of GaAs(100): Theory and experiment. Physical Review Letters 81 (3), 721–724 (1998).

Bockstedte, M., A. Kley, J. Neugebauer und M. Scheffler: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), 187–222 (1997).

Kley, A., P. Ruggerone und M. Scheffler: Novel diffusion mechanism on the GaAs (001) surface: the role of adatom-dimer interaction. Physical Review Letters 79 (26), 5278–5281 (1997).

Pehlke, E., N. Moll, A. Kley und M. Scheffler: Shape and stability of quantum dots. Applied Physics A 65 (6), 525–534 (1997).

Ruggerone, P., A. Kley und M. Scheffler: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Psi-k Newsletter 21, 75–87 (1997).

Ruggerone, P., A. Kley und M. Scheffler: Microscopic aspects of homoepitaxial growth. Progress in Surface Science 54 (3-4), 331–340 (1997).

Moll, N., A. Kley, E. Pehlke und M. Scheffler: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), 8844–8855 (1996).

Kley, A., J. Neugebauer und M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).

Kley, A. und J. Neugebauer: Atomic and electronic interface structure of the GaAs/ZnSe (001) interface. Physical Review B 50 (12), 8616–8628 (1994).

Grosse, F., A. Kley, M. Scheffler und R. Zimmermann: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors. (Hrsg.): D. Gershoni. World Scientific, Singaporeim Druck

Ruggerone, P., A. Kley und M. Scheffler: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Hrsg.): V. Fiorentini. (Conference proceedings / Italian Physical Society, Vol. 55). Italian Physical Society, Bologna, 33–42 (1997).

Kley, A. und M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Hrsg.): M. Scheffler., 1031–1034 (1996).

Kley, A.: Theoretische Untersuchungen zur Adatomdiffusion auf niederindizierten Oberflächen von GaAs. Technische Universität Berlin Berlin

Kley, A.: Gesamtenergierechnungen zur GaAs/ZnSe(001) Heterogrenzfläche. Humboldt-Universität zu Berlin Berlin