Publikationen von Jörg Neugebauer

Neugebauer, J.: Ab initio analysis of surface structure and adatom kinetics of group-III nitrides. Physica Status Solidi B 227 (1), S. 93 - 114 (2001)

Lee, C. D.; Feenstra, R. M.; Rosa, A. L. d.; Neugebauer, J.; Northrup, J. E.: Silicon on GaN(0001) and (0001) surfaces. Journal of Vacuum Science and Technology B 19 (4), S. 1619 - 1625 (2001)

Van de Walle, C. G.; Limpijumnong, S.; Neugebauer, J.: First-principles studies of beryllium doping of GaN. Physical Review B 63 (24), 245205 (2001)

Grosse, F.; Neugebauer, J.: Limits and accuracy of valence force field models for In_xGa_1-xN alloys. Physical Review B 63 (08), 085207 (2001)

Chen, H.; Feenstra, R. M.; Northrup, J. E.; Neugebauer, J.; Greve, D. W.: Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory. MRS Internet Journal of Nitride Semiconductor Research 6 (11), e11 (2001)

Chen, H.; Feenstra, R. M.; Northrup, J. E.; Zywietz, T. K.; Neugebauer, J.; Greve, D. W.: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), S. 1902 - 1905 (2000)

Chen, H.; Feenstra, R. M.; Northrup, J.; Zywietz, T. K.; Neugebauer, J.; Greve, D. W.: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), S. 2284 - 2289 (2000)

Ebert, P.; Urban, K.; Aballe, L.; Chen, C.-H.; Horn, K.; Schwarz, G.; Neugebauer, J.; Scheffler, M.: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), S. 5816 - 5819 (2000)

Neugebauer, J.; Zywietz, T. K.; Scheffler, M.; Northrup, J.: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, S. 355 - 359 (2000)

Northrup, J.; Neugebauer, J.; Feenstra, R. M.; Smith, A. R.: Structure of GaN(0001): The laterally contracted Ga bilayer model. Physical Review B 61 (4), S. 9932 - 9935 (2000)

Van de Walle, C. G.; Neugebauer, J.: Arsenic impurities in GaN. Applied Physics Letters 76 (8), S. 1009 - 1011 (2000)

Feenstra, R. M.; Chen, H.; Ramachandran, V.; Lee, C. D.; Smith, A. R.; Northrup, J. E.; Zywietz, T. K.; Neugebauer, J.; Greve, D. W.: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), S. 601 - 606 (2000)

Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.; McCluskey, M. D.; Johnson, N. M.: Defects and Defect Reactions in Semiconductor Nitrides. Acta Physica Polonica A 96 (5), S. 613 - 627 (1999)

Northrup, J. E.; Neugebauer, J.: Indium induced changes in GaN(0001) surface morphology. Physical Review B 60 (12), S. R8473 - R8476 (1999)

Stampfl, C.; Neugebauer, J.; Van de Walle, C. G.: Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B 59 (1-3), S. 253 - 257 (1999)

Northrup, J. E.; Romano, L. T.; Neugebauer, J.: Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. Applied Physics Letters 74 (16), S. 2319 - 2322 (1999)

Zywietz, T. K.; Neugebauer, J.; Scheffler, M.: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), S. 1695 - 1697 (1999)

Smith, A. R.; Feenstra, R. M.; Greve, D. W.; Shin, M.-S.; Skowronski, M.; Neugebauer, J.; Northrup, J. E.: GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surface Science 423 (1), S. 70 - 84 (1999)

Van de Walle, C. G.; Neugebauer, J.: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, S. 439 (1999)

Van de Walle, C. G.; Stampfl, C.; Neugebauer, J.; McCluskey, M. D.; Johnson, N. M.: Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research 4 (S1), S. 901 - 912 (1999)