Publikationen von Chris G. Van de Walle

Van de Walle, C. G.; Neugebauer, J.: Structure and energetics of nitride surfaces under MOCVD growth conditions. Journal of Crystal Growth 248, S. 8 - 13 (2003)

Van de Walle, C. G.; Neugebauer, J.: Role of hydrogen in surface reconstructions and growth of GaN. Journal of Vacuum Science and Technology B 20, S. 1640 - 1646 (2002)

Van de Walle, C. G.; Neugebauer, J.: First-principles surface phase diagram for hydrogen on GaN surfaces. Physical Review Letters 88, S. 066103-1 - 066103-4 (2002)

Van de Walle, C. G.; Neugebauer, J.: Arsenic impurities in GaN. Applied Physics Letters 76 (8), S. 1009 - 1011 (2000)

Van de Walle, C. G.: Hydrogen as a cause of doping in zinc oxide. Physical Review Letters 85, S. 1012 - 1015 (2000)

Van de Walle, C. G.; Neugebauer, J.: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, S. 439 (1999)

Neugebauer, J.; Van de Walle, C. G.: Theory of hydrogen in GaN. In: Hydrogen in semiconductors II, S. 479 - 502 (Hg. Nickel, N. H.). Acad. Press, Boston (1999)