Publikationen von Eckard Pehlke

Pehlke, E. und P. Kratzer: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces. Physical Review B 59 (4), 2790–2800 (1999).

Fuchs, M., M. Bockstedte, E. Pehlke und M. Scheffler: Pseudopotential study of binding properties of solids within generalized gradient approximations: The role of core-valence exchange correlation. Physical Review B 57 (4), 2134–2145 (1998).

Pehlke, E., N. Moll, A. Kley und M. Scheffler: Shape and stability of quantum dots. Applied Physics A 65 (6), 525–534 (1997).

Moll, N., A. Kley, E. Pehlke und M. Scheffler: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), 8844–8855 (1996).

Moll, N., M. Bockstedte, M. Fuchs, E. Pehlke und M. Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, 2550–2556 (1995).

Pehlke, E. und M. Scheffler: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors 549–552 (1995).

Pehlke, E. und M. Scheffler: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, 952–955 (1995).

Dabrowski, J., E. Pehlke und M. Scheffler: Relation between the atomic structure and the surface-stress anisotropy: Calculations for the clean Si(001) surface. Journal of Vacuum Science and Technology B 12 (4), 2675–2677 (1994).

Dabrowski, J., E. Pehlke und M. Scheffler: Calculation of the surface stress anisotropy for the buckled Si(001)(1x2) and p(2x2) surfaces. Physical Review B 49 (7), 4790–4793 (1994).

Mukherjee, S., E. Pehlke und J. Tersoff: Calculation of temperature effects on the equilibrium crystal shape of Si near (100). Physical Review B 49 (3), 1919–1927 (1994).

Pehlke, E. und M. Scheffler: Evidence for site-sensitive screening of core holes at the Si and Ge(001) surface. Physical Review Letters 71 (14), 2338–2341 (1993).

Tersoff, J. und E. Pehlke: Equilibrium crystal shape of silicon near (001). Physical Review B 47 (7), 4072–4075 (1993).

Pehlke, E., N. Moll und M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Hrsg.): V. Fiorentini und F. Meloni. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).

Pehlke, E.: Surface stress and the mesoscopic structure of solid surfaces. In: Thermodynamics of Surfaces: Minisymposium, May 11 - 13, 1995. (Hrsg.): W. Muschik und C. Papenfuss. (TUB-Dokumentation Wissenstransfer, Vol. 2). Technische Universität, Berlin, 144–163 (1996).

Pehlke, E., N. Moll und M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Hrsg.): R. Zimmermann. World Scientific, Singapore, 1301–1304 (1996).

Dabrowski, J., E. Pehlke und M. Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. (Hrsg.): P. Jiang und H.-Z. Zheng. World Scientific, Singapore, 389–392 (1992).