Publikationen von Chris G. Van de Walle

Van de Walle, C.G. und J. Neugebauer: Structure and energetics of nitride surfaces under MOCVD growth conditions. Journal of Crystal Growth 248, 8–13 (2003).

Van de Walle, C.G. und J. Neugebauer: Role of hydrogen in surface reconstructions and growth of GaN. Journal of Vacuum Science and Technology B 20, 1640–1646 (2002).

Van de Walle, C.G. und J. Neugebauer: First-principles surface phase diagram for hydrogen on GaN surfaces. Physical Review Letters 88, 066103–1-066103–4 (2002).

Van de Walle, C.G.: Hydrogen as a cause of doping in zinc oxide. Physical Review Letters 85, 1012–1015 (2000).

Van de Walle, C.G. und J. Neugebauer: Arsenic impurities in GaN. Applied Physics Letters 76 (8), 1009–1011 (2000).

Van de Walle, C.G. und J. Neugebauer: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, 439 (1999).

Neugebauer, J. und C.G. Van de Walle: Theory of hydrogen in GaN. In: Hydrogen in semiconductors II. (Hrsg.): N.H. Nickel. (Semiconductors and semimetals, Vol. 61). Acad. Press, Boston, 479–502 (1999).