Surface Science  

The ISC has a number of state-of-the-art ultrahigh vacuum systems that encompass multiple techniques for the structural and chemical analysis of nanoscale materials in situ and under operando conditions.
A more detailed description of the different systems can be found below.

UHV System 1

• Load lock
  • Transfer to electrochemical cell and UHV
• Preparation chamber
  • Ar sputtering
  • Electron beam heater
  • Electron beam evaporator
  • Quartz crystall microbalance
  • Ion / atom hybrid plasma source
• Analysis chamber
  • XPS
• Microscopy chamber
  • HT-STM, temperature: LN₂ - 1300 K
• Electrochemical flow cell

UHV System 2

• Load lock
  • Transfer to UHV
• Preparation chamber
  • Ar sputtering
  • Electron beam heater
  • Electron beam evaporator
  • Quartz crystall microbalance
  • Ion / atom hybrid plasma source
• Analysis chamber
  • XPS, UPS, AES, LEIS
  • LEED
  • TPD
• Microscopy chamber
  • NAP-STM/AFM (100 mbar; LN₂ - 750 K)
• High pressure reactor cell
  • Up to 20 bar
  • Interfaced to a mass spectrometer
  • Batch and flow modes

UHV System 3

The NAP-XPS system allows the preparation of samples in situ through physical vapor deposition and to expose them to different chemical environments to mimic real catalytic systems.

• Load lock
• Preparation chamber
  • Ar sputtering
  • Electron beam evaporator
  • Electron beam heater under UHV conditions, IR heater for ambient pressures up to 100 mbar, heating up to 900 K
  • Ion / atom hybrid plasma source
• Analysis chamber
  • NAP-XPS
  • Al Kα X-ray source, with Specs FOCUS 600 ellipsoidal monochromator
  • Flood gun for charge compensations
  • Mass flow controllers for gases dosing
  • Base pressure: 1 × 10^-10 mbar
• IR / TPD chamber
  • Infrared Reflective-Absorption spectrometer (IRRAS) for in situ surface film characterization
  • Quadrupole mass spectrometer
  • TPD
  • Electron beam heater
• High pressure reactor cell
  • Up to 20 bar
  • IR heating up to 1100 K

UHV System 4

• Load lock
• Preparation chamber
  • Ar sputtering
  • Electron beam evaporators
  • Electron beam heater
  • Ion / atom hybrid plasma source
• Analysis chamber
  • XPS, LEIS, TPD
  • NAP-STM/AFM
• High pressure reactor cell
  • Up to 20 bar
  • Mass spectrometer
• Electrochemical cell and UHV transfer buffer chamber

UHV System 5

• Sample entry load lock
• Two Chamber system for Surface Action Spectroscopy (SAS)
  
  • 'Messenger' atom (e.g. He, Ne, H₂) detection: quadrupole mass spectrometer (MS)
• FHI Free Electron Laser (FEL) generating infrared (IR) radiation for surface vibration excitation
• Helium flow cryostat-cooled manipulator
• STM/AFM system (12 K  - 300 K)
• Ar Sputter gun, electron beam evaporator
• LEED
• Microwave plasma source

UHV System 6

• Load lock
• Analysis chamber
  • Ar sputter gun
  • Electron beam evaporator
  • Quartz crystal microbalance
  • XPS
  • STM, room temperature
  • TPD
  • LEED-IV
• Electrochemical cell connected to UHV

UHV System 7

• Load lock
• Preparation chamber
  • Ar sputter gun
  • Electron beam evaporation
  • LEED
  • AES
  • Quadrupole mass spectrometer
• Analyis chamber for thin-film catalysis investigations
  • HREELS 

UHV System 8

• Preparation / analysis chamber
  • Ar sputtering
  • Resistive heating (LN₂ – 1200 K)
  • 2 Electron beam evaporators
  • Quadrupole mass spectrometer
  • Ion / atom hybrid plasma source
  • LEED
  • TPD
  • XPS

• High pressure reaction chamber (UHV up to 1 bar)
  • IRAS
  • Polarization modulated IRAS (PM-IRAS)
  • Gas chromatograph

UHV System 9

• Preparation / analysis chamber
  • Ar sputtering
  • Resistive heating (LN₂ – 1200 K)
  • Electron beam evaporator
  • Quadrupole mass spectrometer
  • LEED
  • TPD
  • IRAS
• High pressure reaction chamber (UHV up to 1 bar)
  • Gas chromatograph