Publications of Tosja K. Zywietz

J. Neugebauer, T.K. Zywietz, M. Scheffler, J.E. Northrup, H. Chen and R.M. Feenstra: Adatom kinetics on and below the surface: The existence of a new diffusion channel. Physical Review Letters 90 (5), 056101–1-056101–4 (2003).

H. Chen, R.M. Feenstra, J.E. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), 1902–1905 (2000).

H. Chen, R.M. Feenstra, J. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), 2284–2289 (2000).

J. Neugebauer, T.K. Zywietz, M. Scheffler and J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).

R.M. Feenstra, H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), 601–606 (2000).

T.K. Zywietz, J. Neugebauer and M. Scheffler: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), 1695–1697 (1999).

J. Neugebauer, T.K. Zywietz, M. Scheffler, J.E. Northrup and C.G. Van de Walle: Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), 3097–3100 (1998).

T.K. Zywietz, J. Neugebauer and M. Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), 487–489 (1998).

T.K. Zywietz, J. Neugebauer, M. Scheffler and J.E. Northrup: Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, 112–124 (1998).

T.K. Zywietz, J. Neugebauer, M. Scheffler, J.E. Northrup and C.G. Van de Walle: Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998).

J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).

T.K. Zywietz: Dichte-Funktional-Theorie der thermodynamischen und kinetischen Eigenschaften polarer Galliumnitrid-Oberflächen. Technische Universität Berlin Berlin