Publications of Nikolaj Moll

L.G. Wang, P. Kratzer, N. Moll and M. Scheffler: Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate. Physical Review B 62, 1897–1904 (2000).

Q.K.K. Liu, N. Moll, M. Scheffler and E. Pehlke: Equilibrium shapes and energies of coherent strained InP islands. Physical Review B 60 (24), 17008–17015 (1999).

L.G. Wang, P. Kratzer, M. Scheffler and N. Moll: Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy. Physical Review Letters 82 (20), 4042–4045 (1999).

S. Mirbt, N. Moll, A. Kley and J.D. Joannopoulos: A general rule for surface reconstructions of III-V semiconductors. Surface Science 422 (1-3), L177–L182 (1999).

N. Moll, M. Scheffler and E. Pehlke: Influence of surface stress on the equilibrium shape of strained quantum dots. Physical Review B 58 (8), 4566–4571 (1998).

E. Pehlke, N. Moll, A. Kley and M. Scheffler: Shape and stability of quantum dots. Applied Physics A 65 (6), 525–534 (1997).

N. Moll, A. Kley, E. Pehlke and M. Scheffler: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), 8844–8855 (1996).

N. Moll, M. Bockstedte, M. Fuchs, E. Pehlke and M. Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, 2550–2556 (1995).

E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Eds.): V. Fiorentini and F. Meloni. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).

E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Ed.): R. Zimmermann. World Scientific, Singapore, 1301–1304 (1996).

N. Moll: Theorie der Form und Stabilität von Quantenpunkten auf III-V-Halbleitern. TU Berlin

N. Moll: Berechnung der Oberflächenspannung von GaAs/AlAs-Oberflächen. TU Berlin