Publications of Matthias Scheffler
All genres
Journal Article (604)
Journal Article
W. Berndt, D. Weick, C. Stampfl, A.M. Bradshaw and M. Scheffler: Structural analysis of the two c(2x2) phases of Na adsorbed on Al(100). Surface Science 330 (2), 182–192 (1995).
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Journal Article
, , , , , C. Stampfl, M. Scheffler, , and : Formation and structural analysis of a surface alloy: Al(111)-(2 x 2)-Na. Physical Review Letters 74, 1617–1620 (1995).
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M.W. Finnis, , , and M. Scheffler: The interaction of a point charge with a metal surface: theory and calculations for (111), (100) and (110) aluminium surfaces. Journal of Physics: Condens. Matter 7, 2001–2019 (1995).
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V. Fiorentini, M. Methfessel and M. Scheffler: Surface stress, relaxation and reconstruction in fcc transition metals. Vuoto XXIV, 21–24 (1995).
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V. Fiorentini, S. Oppo and M. Scheffler: Towards an understanding of surfactant action on the epitaxial growth of metals: the case of Sb on Ag(111). Applied Physics A 60, 399–402 (1995).
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, , , R. Stumpf and M. Scheffler: Site-selective adsorption of C atoms on Al(111) surfaces. Physical Review Letters 74 (25), 5084–5087 (1995).
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A. Groß, and M. Scheffler: Six-dimensional quantum dynamics of adsorption and desorption of H_2 at Pd(100): Steering and steric effects. Physical Review Letters 75, 2718–2721 (1995).
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and M. Scheffler: Local chemical reactivity of a metal alloy surface. Physical Review Letters 74, 3487–3490 (1995).
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, , , and M. Scheffler: The interaction of hydrogen with the (110) surface of NiAl. Surface Science 331-333, 811–817 (1995).
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A. Kley, J. Neugebauer and M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).
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B. Kohler, P. Ruggerone, and M. Scheffler: Frustrated H-induced instability of Mo(110). Physical Review Letters 74, 1387–1390 (1995).
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M. Methfessel, and M. Scheffler: Enhanced screening of core holes at transition-metal surfaces. Surface Review and Letters 2, 197–201 (1995).
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N. Moll, M. Bockstedte, M. Fuchs, E. Pehlke and M. Scheffler: Application of generalized gradient approximations: The diamond-߭tin phase transition in Si and Ge. Physical Review B 52, 2550–2556 (1995).
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S. Oppo, V. Fiorentini and M. Scheffler: Size-effect surfactants for metal-on-metal growth: Sb on Ag(111). Vuoto XXIV, 37–39 (1995).
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and M. Scheffler: Formation of localized excitons and the breaking of chemical bonds at III-V (110) surfaces. Proc. of the 22nd International Conference on the Physics of Semiconductors 485–488 (1995).
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and M. Scheffler: Localized excitons and breaking of chemical bonds at III-V (110) surfaces. Physical Review Letters 75, 701–704 (1995).
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E. Pehlke and M. Scheffler: Hydrogen adsorption on and desorption from Si(001). Proc. of the 22nd International Conference on the Physics of Semiconductors 549–552 (1995).
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E. Pehlke and M. Scheffler: Theory of adsorption and desorption of H_2/Si(001). Physical Review Letters 74, 952–955 (1995).
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C. Stampfl and M. Scheffler: Theory of alkali metal adsorption on close-packed metal surfaces. Surface Review and Letters 2, 317–343 (1995).