Publications of Matthias Scheffler

Conference Paper (27)

Conference Paper
F. Grosse, J. Neugebauer and M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Ed.): G. David. World Scientific, Singaporein press
Conference Paper
J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).
Conference Paper
A. Groß and M. Scheffler: Steering and Isotope Effects in the Dissociative Adsorption of H2/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996. (Eds.): V. Kumar, S. Sengupta, and B. Raj. Springer, Berlin, 285–292 (1997).
Conference Paper
E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Eds.): V. Fiorentini and F. Meloni. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).
Conference Paper
M. Petersen, P. Ruggerone and M. Scheffler: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): V. Fiorentini. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 43–52 (1997).
Conference Paper
P. Ruggerone, A. Kley and M. Scheffler: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): V. Fiorentini. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 33–42 (1997).
Conference Paper
A. Groß, M. Bockstedte and M. Scheffler: Ab initio Molecular Dynamics Study of D2 Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): M. Scheffler. World Scientific, Singapore, 951–954 (1996).
Conference Paper
A. Kley and M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): M. Scheffler., 1031–1034 (1996).
Conference Paper
E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Ed.): R. Zimmermann. World Scientific, Singapore, 1301–1304 (1996).
Conference Paper
P. Ruggerone, B. Kohler, S. Wilke and M. Scheffler: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems. (Ed.): E. Bertel. World Scientific, Singapore, 113–126 (1995).
Conference Paper
M. Heinemann and M. Scheffler: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces. (Eds.): B. Lengeler, H. Lüth, W. Mönch, and J. Pollmann. World Scientific, Singapore, 297–300 (1994).
Conference Paper
S. Oppo, V. Fiorentini and M. Scheffler: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings. Materials Research Society, New York, 323–328 (1994).
Conference Paper
J. Dabrowski, E. Pehlke and M. Scheffler: DFT-LDA calculations ofsurface core-level shifts for Si(001), Ge(001), and Ge on Si(001) (2x1) surfaces. In: 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. (Eds.): P. Jiang and H.-Z. Zheng. World Scientific, Singapore, 389–392 (1992).
Conference Paper
F. Máca, M. Scheffler and W. Berndt: A LEED analysis of sqrt{3} x sqrt{3} S on Pd(111). In: Proc. 3rd Symposium on Surface Physics: Physics of Solid Surfaces. (Ed.): J. Koukal., 195–198 (1985).
Conference Paper
J. Bernholc, N.O. Lipari, S.T. Pantelides and M. Scheffler: Theory of point defects and deep impurities in semiconductors. In: Defects and Radiation Effects in Semiconductors. (Ed.): R.R. Hasiguti. Institute of Physics, London, 1–17 (1981).
Conference Paper
M. Scheffler, K. Kambe, F. Forstmann and K. Jacobi: Angle-resolved photoemission of the oxygen overlayer on Ni,(001): Part 1 (Calculations). In: Proceedings of the 7th International Vacuum Congress and the 3rd International Conference on Solid Surfaces of the International Union for Vacuum Science, Technique and Applications. (Ed.): R. Dobrozemsky., 2223–2226 (1977).
Conference Paper
M. Scheffler, K. Kambe and F. Forstmann: Energy and angle-resolved photoemission. In: Proceedings International Symposium on Photoemission. (Eds.): R.F. Willis, B. Feuerbacher, B. Fitton, and C. Backx. ESA, Paris, France, 227 (1976).

Talk (177)

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