Publications of Matthias Scheffler

Journal Article (594)

301.
Journal Article
Erwin, S.C., S.-H. Lee and M. Scheffler: First-principles study of nucleation, growth, and interface structure on Fe/GaAs. Physical Review B 65 (20), 205422 (2002).
302.
Journal Article
Fichthorn, K.A., M.L. Merrick and M. Scheffler: A kinetic Monte Carlo investigation of island nucleation and growth in thin-film epitaxy in the presence of substrate-mediated interactions. Applied Physics A 75, 17–23 (2002).
303.
Journal Article
Filippi, C., S.B. Healy, P. Kratzer, E. Pehlke and M. Scheffler: Quantum Monte Carlo calculations of H2 dissociation on Si(001). Physical Review Letters 89 (16), 166102 (2002).
304.
Journal Article
Fuchs, M., J.L.F. Da Silva, C. Stampfl, J. Neugebauer and M. Scheffler: Cohesive properties of group-III nitrides: A comparative study of all-electron and pseudopotential calculations using the generalized gradient approximation. Physical Review B 65 (24), 245212 (2002).
305.
Journal Article
Ganduglia-Pirovano, M.V., K. Reuter and M. Scheffler: Stability of subsurface oxygen at Rh(111). Physical Review B 65 (24), 245426 (2002).
306.
Journal Article
Hedström, M., A. Schindlmayr and M. Scheffler: Quasiparticle Calculations for Point Defects on Semiconductor Surfaces. Physica Status Solidi (B) 234 (1), 346–353 (2002).
307.
Journal Article
Kratzer, P., E. Penev and M. Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, 79–88 (2002).
308.
Journal Article
Kratzer, P. and M. Scheffler: Reaction-limited island nucleation in molecular beam epitaxy of compound semiconductors. Physical Review Letters 88 (3), 036102 (2002).
309.
Journal Article
Kroes, G.-J., A. Groß, E.-J. Baerends, M. Scheffler and D.A. McCormack: Quantum theory of dissociative chemisorption on metal surfaces. Accounts of Chemical Research 35 (3), 193–200 (2002).
310.
Journal Article
Lee, S.M., S.-H. Lee and M. Scheffler: Comment on "Anomalous mobility of strongly bound surface species: Cl on GaAs(001)-c(8x2)". Physical Review Letters 89 (23), 239601 (2002).
311.
Journal Article
Li, W., C. Stampfl and M. Scheffler: Oxygen adsorption on Ag(111): A density-functional theory investigation. Physical Review B 65 (7), 075407 (2002).
312.
Journal Article
Pentcheva, R. and M. Scheffler: Initial adsorption of Co on Cu(001): A first-principles investigation. Physical Review B 65 (15), 155418 (2002).
313.
Journal Article
Reuter, K., M.V. Ganduglia-Pirovano, C. Stampfl and M. Scheffler: Metastable precursors during the oxidation of the Ru(0001) surface. Physical Review B 65 (16), 165403 (2002).
314.
Journal Article
Reuter, K., C. Stampfl, M.V. Ganduglia-Pirovano and M. Scheffler: Atomistic description of oxide formation on metal surfaces: the example of ruthenium. Chemical Physics Letters 352 (5-6), 311–317 (2002).
315.
Journal Article
Stampfl, C., M.V. Ganduglia-Pirovano, K. Reuter and M. Scheffler: Catalysis and corrosion: the theoretical surface-science context. Surface Science 500 (1-3), 368–394 (2002).
316.
Journal Article
Stampfl, C. and M. Scheffler: Energy barriers and chemical properties in the coadsorption of carbon monoxide and oxygen on Ru(0001). Physical Review B 65 (15), 155417 (2002).
317.
Journal Article
Todorova, M., W. Li, M.V. Ganduglia-Pirovano, C. Stampfl, K. Reuter and M. Scheffler: Role of sub-surface oxygen in oxide formation at transition metal surfaces. Physical Review Letters 89 (9), 096103 (2002).
318.
Journal Article
Wang, X.-G., J.R. Smith and M. Scheffler: Effect of hydrogen on Al2O3/Cu interfacial structure and adhesion. Physical Review B 66 (7), 073411 (2002).
319.
Journal Article
Kratzer, P. and M. Scheffler: Surface Knowledge: Toward a Predictive Theory of Materials. Computing in Science & Engineering 3 (6), 16–25 (2001).
320.
Journal Article
Ebert, P., P. Quadbeck, K. Urban, B. Henninger, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters 79 (18), 2877–2879 (2001).
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