Publications of Matthias Scheffler

Overhof, H., M. Scheffler and C.C. Weinert: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, 12494–12506 (1991).

Scheffler, M., C. Droste, A. Fleszar, F. Máca, G. Wachutka and G. Barzel: A self-consistent surface-Green-function (SSGF) method. Physica B 172, 143–153 (1991).

Schmalz, A., S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

Doyen, G., E. Koetter, J.P. Vigneron and M. Scheffler: Theory of scanning tunneling microscopy. Applied Physics A 51, 281–288 (1990).

Gonze, X., P. Käckell and M. Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), 12264–12267 (1990).

Beeler, F., O.K. Andersen and M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, 1603–1624 (1990).

Biernacki, S. and M. Scheffler: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics 188–198 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20) 469–472 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio and M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

Caldas, M.J., A. Fazzio, J. Dabrowski and M. Scheffler: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, 563–567 (1990).

Dabrowski, J., M. Scheffler and R. Strehlow: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 489–492 (1990).

Doyen, G., E. Koetter, J.P. Vigneron and M. Scheffler: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, 281–288 (1990).

Gonze, X., P. Käckell and M. Scheffler: Ghost States for Separable, Norm-Conserving, Ab-Initio Pseudopotentials. Physical Review B 41, 12264–12267 (1990).

Hebenstreit, J., M. Heinemann and M. Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 215–218 (1990).

Hebenstreit, J., M. Heinemann and M. Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, 71–75 (1990).

Maca, F., M. Said, K. Kambe and M. Scheffler: Electronic structure and angular resolved photoemission calculations for fcc and bcc silver surfaces. Vacuum 41 (1-3), 538–542 (1990).

Máca, F., M. Said, K. Kambe and M. Scheffler: Electronic Structure and Angular Resolved Photoemission Calculations for fcc and bcc Silver Surfaces. Vacuum 41, 538–542 (1990).

Methfessel, M., B.K. Agrawal and M. Scheffler: The Influence of Structural Relaxation on the Valence-Band Offset at Semiconductor-Semiconductor Interfaces. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 989–992 (1990).

Vigneron, J.P., M. Scheffler, T. Laloyaux, I. Derycke and A.A. Lucas: Spatial Electron Current Distribution in a Scanning Tunneling Microscope. Vacuum 41, 745–746 (1990).