Publications of Alexander Kley

Journal Article (15)

1999
Journal Article
K. Jacobi, J. Platen, C. Setzer, J. Márquez, L. Geelhaar, C. Meyne, W. Richter, A. Kley, P. Ruggerone and M. Scheffler: Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (112)B surfaces. Surface Science 439 (1-3), 59–72 (1999).
Journal Article
L. Geelhaar, J. Márquez, K. Jacobi, A. Kley, P. Ruggerone and M. Scheffler: A scanning tunneling microscopy study of the GaAs(112) surfaces. Microelectronics Journal 30 (4-5), 393–396 (1999).
Journal Article
J. Platen, A. Kley, C. Setzer, K. Jacobi, P. Ruggerone and M. Scheffler: The importance of high-index surfaces for the morphology of GaAs quantum dots. Journal of Applied Physics 85 (7), 3597–3601 (1999).
Journal Article
S. Mirbt, N. Moll, A. Kley and J.D. Joannopoulos: A general rule for surface reconstructions of III-V semiconductors. Surface Science 422 (1-3), L177–L182 (1999).
1998
Journal Article
P. Ruggerone, A. Kley and M. Scheffler: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Comments on Condensed Matter Physics 18, 261–277 (1998).
Journal Article
G. Schwarz, A. Kley, J. Neugebauer, J. Neugebauer and M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).
Journal Article
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley and R. Del Sole: Reflectance anisotropy of GaAs(100): Theory and experiment. Physical Review Letters 81 (3), 721–724 (1998).
1997
Journal Article
M. Bockstedte, A. Kley, J. Neugebauer and M. Scheffler: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), 187–222 (1997).
Journal Article
A. Kley, P. Ruggerone and M. Scheffler: Novel diffusion mechanism on the GaAs (001) surface: the role of adatom-dimer interaction. Physical Review Letters 79 (26), 5278–5281 (1997).
Journal Article
E. Pehlke, N. Moll, A. Kley and M. Scheffler: Shape and stability of quantum dots. Applied Physics A 65 (6), 525–534 (1997).
Journal Article
P. Ruggerone, A. Kley and M. Scheffler: Bridging the length and time scales: from ab initio electronic structure calculations to macroscopic proportions. Psi-k Newsletter 21, 75–87 (1997).
Journal Article
P. Ruggerone, A. Kley and M. Scheffler: Microscopic aspects of homoepitaxial growth. Progress in Surface Science 54 (3-4), 331–340 (1997).
1996
Journal Article
N. Moll, A. Kley, E. Pehlke and M. Scheffler: GaAs equilibrium crystal shape from first-principles. Physical Review B 54 (12), 8844–8855 (1996).
1995
Journal Article
A. Kley, J. Neugebauer and M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).
1994
Journal Article
A. Kley and J. Neugebauer: Atomic and electronic interface structure of the GaAs/ZnSe (001) interface. Physical Review B 50 (12), 8616–8628 (1994).

Conference Paper (3)

1999
Conference Paper
F. Grosse, A. Kley, M. Scheffler and R. Zimmermann: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors. (Ed.): D. Gershoni. World Scientific, Singaporein press
1997
Conference Paper
P. Ruggerone, A. Kley and M. Scheffler: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): V. Fiorentini. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 33–42 (1997).
1996
Conference Paper
A. Kley and M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): M. Scheffler., 1031–1034 (1996).

Thesis - PhD (1)

1997
Thesis - PhD
A. Kley: Theoretische Untersuchungen zur Adatomdiffusion auf niederindizierten Oberflächen von GaAs. Technische Universität Berlin Berlin

Thesis - Diploma (1)

1992
Thesis - Diploma
A. Kley: Gesamtenergierechnungen zur GaAs/ZnSe(001) Heterogrenzfläche. Humboldt-Universität zu Berlin Berlin
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