Publications of Carsten Setzer

P. Geng, J. Márquez, L. Geelhaar, J. Platen, C. Setzer and K. Jacobi: A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces. Review of Scientific Instruments 71 (2), 504–508 (2000).

K. Jacobi, J. Platen, C. Setzer, J. Márquez, L. Geelhaar, C. Meyne, W. Richter, A. Kley, P. Ruggerone and M. Scheffler: Morphology, surface core-level shifts and surface energy of the faceted GaAs(112)A and (112)B surfaces. Surface Science 439 (1-3), 59–72 (1999).

J. Platen, A. Kley, C. Setzer, K. Jacobi, P. Ruggerone and M. Scheffler: The importance of high-index surfaces for the morphology of GaAs quantum dots. Journal of Applied Physics 85 (7), 3597–3601 (1999).

C. Setzer, J. Platen, W. Ranke and K. Jacobi: Low energy electron diffraction and photoelectron spectroscopy study of GaAs(113)A and (1¯1¯3¯)B surfaces prepared by molecular beam epitaxy and by ion bombardment and annealing. Surface Science 419 (2-3), 291–302 (1999).

M. Pristovsek, H. Menhal, T. Wehnert, J.-T. Zettler, T. Schmidtling, N.N. Esser, W. Richter, C. Setzer, J. Platen and K. Jacobi: Reconstructions of the GaAs (1 1 3) surface. Journal of Crystal Growth 195 (1-4), 1–5 (1998).

C. Setzer, J. Platen, H. Bludau, M. Gierer, H. Over and K. Jacobi: LEED intensity and surface core level shift analysis ofthe MBE-prepared GaAs (1 ̅1 ̅1 ̅)B(2×2 ) surface. Surface Science 402-404, 782–785 (1998).

S.M. Scholz, C. Setzer, K. Jacobi, F. Schabert and J.P. Rabe: Thermal etching of GaAs (1 1 3) surfaces. Journal of Materials Science: Materials in Electronics 9, 115–119 (1998).

J. Platen, C. Setzer, W. Ranke and K. Jacobi: Structure and surface core level shifts of the GaAs(114)A and B surface. Applied Surface Science 123-124, 43–47 (1998).

C. Setzer, J. Platen, P. Geng, W. Ranke and K. Jacobi: Geometrical and electronic structure of the MBE-prepared GaAs(113)A surface. Surface Science 377–379, 125–129 (1997).

J. Platen, C. Setzer, P. Geng, W. Ranke and K. Jacobi: Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces. Microelectronics Journal 28 (8-10), 969–976 (1997).

C. Setzer: Die geometrische und elektronische Struktur epitaktisch gewachsener GaAs{111}-, {113}- und {115}-Oberflächen. Technische Universität Berlin