Publikationen von Peter Kratzer

Wang, L. G.; Kratzer, P.; Moll, N.; Scheffler, M.: Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate. Physical Review B 62, S. 1897 - 1904 (2000)

LaBella, V. P.; Yang, H.; Bullock, D. W.; Thibado, P. M.; Kratzer, P.; Scheffler, M.: Atomic structure of the GaAs(001)-(2x4) surface resolved using scanning tunneling microscopy and first-principles theory. Physical Review Letters 83 (15), S. 2989 - 2992 (1999)

Kratzer, P.; Morgan, C. G.; Scheffler, M.: Model for nucleation in GaAs homoepitaxy derived from first principles. Physical Review B 59 (23), S. 15246 - 15252 (1999)

Morgan, C. G.; Kratzer, P.; Scheffler, M.: Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces. Physical Review Letters 82 (24), S. 4886 - 4889 (1999)

Wang, L. G.; Kratzer, P.; Scheffler, M.; Moll, N.: Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy. Physical Review Letters 82 (20), S. 4042 - 4045 (1999)

Penev, E.; Kratzer, P.; Scheffler, M.: Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001). Journal of Chemical Physics 110 (8), S. 3986 - 3994 (1999)

Pehlke, E.; Kratzer, P.: Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces. Physical Review B 59 (4), S. 2790 - 2800 (1999)

Kratzer, P.: The dynamics of the H + D/Si(001) reaction: a trajectory study based on ab initio potentials. Chemical Physics Letters 288 (2-4), S. 396 - 402 (1998)

Kratzer, P.; Morgan, C. G.; Scheffler, M.: Density-functional theory studies on microscopic processes of GaAs growth. Progress in Surface Science 59 (1-4), S. 135 - 147 (1998)

Kratzer, P.; Pehlke, E.; Scheffler, M.; Raschke, M. B.; Höfer, U.: Highly site-specific H₂ adsorption on vicinal Si(001) surfaces. Physical Review Letters 81 (25), S. 5596 - 5599 (1998)

Kunert, R.; Schöll, E.; Hammerschmidt, T.; Kratzer, P.: Strain field calculations of quantum dots - a comparison study of two methods. In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006, S. 73 - 74 (Hg. Jantsch, W.; Schäffler, F.). Springer, Berlin (2007)

Kratzer, P.: Atomistic simulations of processes at surfaces. In: Predictive Simulation of Semiconductor Processing: Status and Challenges, S. 39 - 72 (Hg. Dabrowski, J.; Weber, E. R.). Springer, Berlin (2004)

Scheffler, M.; Kratzer, P.: Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots. In: Atomistic Aspects of Epitaxial Growth, S. 355 - 369 (Hg. Kotrla, M.; Papanicolaou, N.I.; Vvedensky, D.D.; Wille, L.T.). Kluwer, The Netherlands (2002)

Hammerschmidt, T.; Kratzer, P.: Role of strain relaxation during different stages of InAs quantum dot growth. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 601 - 602 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Santoprete, R.; Koiller, B.; Capaz, R. B.; Kratzer, P.; Scheffler, M.: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 745 - 746 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Wu, H.; Kratzer, P.; Scheffler, M.: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 311 - 312 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)

Penev, E.; Kratzer, P.: First-principles study of InAs/GaAs(001) heteroepitaxy. In: Quantum Dots: Fundamentals, Applications,and Frontiers: proceedings of the NATO ARW on Quantum Dots ; Amoudara, Crete, Greece from 20 to 24 July 2003, S. 27 - 42 (Hg. Joyce, B.; Kelires, P.; Naumovets, A.; Vvedensky, D.). NATO ARW on "Quantum Dots: Fundamentals, Applications and Frontiers", Amoudara, Crete, Greece, 20. Juni 2003 - 24. Juni 2003. Springer, The Netherlands (2005)

Scheffler, M.; Kratzer, P.; Wang, L. G.: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics, S. 3 - 7. 4th Symposium on Atomic-scale Surface and Interface Dynamics, Tsukuba, Japan, 02. März 2000 - 03. März 2000. (2000)