Publikationen von Evgeni Penev

Penev, E.; Kratzer, P.; Scheffler, M.: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs. Physical Review Letters 93 (14), S. 146102-1 - 146102-4 (2004)

Penev, E.; Stojkovic, S.; Kratzer, P.; Scheffler, M.: Anisotropic diffusion of In adatoms on pseudomorphic In_xGa_1-xAs(001) films: First-principles total energy calculations. Physical Review B 69, S. 115335-1 - 115335-10 (2004)

Kratzer, P.; Penev, E.; Scheffler, M.: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science 216 (1-4), S. 436 - 446 (2003)

Kratzer, P.; Penev, E.; Scheffler, M.: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, S. 79 - 88 (2002)

Penev, E.; Kratzer, P.; Scheffler, M.: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001)

Healy, S. B.; Filippi, C.; Kratzer, P.; Penev, E.; Scheffler, M.: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001)

Penev, E.; Kratzer, P.; Scheffler, M.: Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001). Journal of Chemical Physics 110 (8), S. 3986 - 3994 (1999)

Penev, E.; Kratzer, P.: First-principles study of InAs/GaAs(001) heteroepitaxy. In: Quantum Dots: Fundamentals, Applications,and Frontiers: proceedings of the NATO ARW on Quantum Dots ; Amoudara, Crete, Greece from 20 to 24 July 2003, S. 27 - 42 (Hg. Joyce, B.; Kelires, P.; Naumovets, A.; Vvedensky, D.). NATO ARW on "Quantum Dots: Fundamentals, Applications and Frontiers", Amoudara, Crete, Greece, 20. Juni 2003 - 24. Juni 2003. Springer, The Netherlands (2005)

Penev, E.: On the theory of surface diffusion in InAs/GaAs(001) heteroepitaxy. Dissertation, Technische Universität, Berlin (2002)