Publikationen von Peter Kratzer
Alle Typen
Zeitschriftenartikel (50)
41.
Zeitschriftenartikel
62, S. 1897 - 1904 (2000)
Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate. Physical Review B 42.
Zeitschriftenartikel
83 (15), S. 2989 - 2992 (1999)
Atomic structure of the GaAs(001)-(2x4) surface resolved using scanning tunneling microscopy and first-principles theory. Physical Review Letters 43.
Zeitschriftenartikel
59 (23), S. 15246 - 15252 (1999)
Model for nucleation in GaAs homoepitaxy derived from first principles. Physical Review B 44.
Zeitschriftenartikel
82 (24), S. 4886 - 4889 (1999)
Arsenic dimer dynamics during MBE growth: Theoretical evidence for a novel chemisorption state of As_2 molecules on GaAs surfaces. Physical Review Letters 45.
Zeitschriftenartikel
82 (20), S. 4042 - 4045 (1999)
Formation and stability of self-assembled coherent islands in highly mismatched heteroepitaxy. Physical Review Letters 46.
Zeitschriftenartikel
110 (8), S. 3986 - 3994 (1999)
Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001). Journal of Chemical Physics 47.
Zeitschriftenartikel
59 (4), S. 2790 - 2800 (1999)
Density-functional study of hydrogen chemisorption on vicinal Si(001) surfaces. Physical Review B 48.
Zeitschriftenartikel
288 (2-4), S. 396 - 402 (1998)
The dynamics of the H + D/Si(001) reaction: a trajectory study based on ab initio potentials. Chemical Physics Letters 49.
Zeitschriftenartikel
59 (1-4), S. 135 - 147 (1998)
Density-functional theory studies on microscopic processes of GaAs growth. Progress in Surface Science 50.
Zeitschriftenartikel
81 (25), S. 5596 - 5599 (1998)
Highly site-specific H2 adsorption on vicinal Si(001) surfaces. Physical Review Letters Buchkapitel (3)
51.
Buchkapitel
Strain field calculations of quantum dots - a comparison study of two methods. In: Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006, S. 73 - 74 (Hg. Jantsch, W.; Schäffler, F.). Springer, Berlin (2007)
52.
Buchkapitel
Atomistic simulations of processes at surfaces. In: Predictive Simulation of Semiconductor Processing: Status and Challenges, S. 39 - 72 (Hg. Dabrowski, J.; Weber, E. R.). Springer, Berlin (2004)
53.
Buchkapitel
Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots. In: Atomistic Aspects of Epitaxial Growth, S. 355 - 369 (Hg. Kotrla, M.; Papanicolaou, N.I.; Vvedensky, D.D.; Wille, L.T.). Kluwer, The Netherlands (2002)
Konferenzbeitrag (5)
54.
Konferenzbeitrag
Role of strain relaxation during different stages of InAs quantum dot growth. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 601 - 602 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)
55.
Konferenzbeitrag
Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 745 - 746 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)
56.
Konferenzbeitrag
Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, S. 311 - 312 (Hg. Menendez, J.; Van de Walle, C.G.). 27th International Conference on the Physics of Semiconductors (ICPS-27), Flagstaff, Arizona, 26. Juli 2004 - 30. Juli 2004. American Institute of Physics, USA (2005)
57.
Konferenzbeitrag
First-principles study of InAs/GaAs(001) heteroepitaxy. In: Quantum Dots: Fundamentals, Applications,and Frontiers: proceedings of the NATO ARW on Quantum Dots ; Amoudara, Crete, Greece from 20 to 24 July 2003, S. 27 - 42 (Hg. Joyce, B.; Kelires, P.; Naumovets, A.; Vvedensky, D.). NATO ARW on "Quantum Dots: Fundamentals, Applications and Frontiers", Amoudara, Crete, Greece, 20. Juni 2003 - 24. Juni 2003. Springer, The Netherlands (2005)
58.
Konferenzbeitrag
Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics, S. 3 - 7. 4th Symposium on Atomic-scale Surface and Interface Dynamics, Tsukuba, Japan, 02. März 2000 - 03. März 2000. (2000)