Publikationen von Matthias Scheffler

Draxl, C. und M. Scheffler: Big-Data-Driven Materials Science and its FAIR Data Infrastructure. In: Handbook of Materials Modeling. (Hrsg.): W. Andreoni und S. Yip. Springer, Cham, 49–73 (2020).

Jacobsen, K.W. und M. Scheffler: The role of data and artificial intelligence. In: Research needs towards sustainable production of fuels and chemicals. Energy-X, Grenoble, 79–90 (2019).

Michaelides, A. und M. Scheffler: An Introduction to the Theory of Crystalline Elemental Solids and their Surfaces. In: Surface and Interface Science: Concepts and Methods. (Hrsg.): K. Wandelt. Wiley-VCH, Weinheim, 13–72 (2012).

Pentcheva, R., N. Mulakaluri, W. Moritz, W.E. Pickett, H.-G. Kleinhenz und M. Scheffler: Compensation mechanisms and functionality of transition metal oxide surfaces and Interfaces: A density functional theory study. In: High Performance Computing in Science and Engineering. (Hrsg.): S. Wagner, M. Steinmetz, A. Bode, und M. Brehm. Springer, Berlin, 709–717 (2009).

Schindlmayr, A. und M. Scheffler: Quasiparticle calculations for point defects at semiconductor surfaces. In: Theory of Defects in Semiconductors. (Hrsg.): D.A. Drabold und S.K. Estreicher. (Topics in Applied Physics, Vol. 104). Springer, Berlin Heidelberg, 165–192 (2007).

Reuter, K., C. Stampfl und M. Scheffler: Ab initio atomistic thermodynamics and statistical mechanics of surface properties and functions. In: Handbook of Materials Modeling. (Hrsg.): S. Yip. Springer, Dordrecht, 149–194 (2005).

Fichthorn, K.A., M.L. Merrick, R. Pentcheva und M. Scheffler: Island nucleation in metal thin-film growth. In: Atomistic Aspects of Epitaxial Growth. (Hrsg.): M. Kotrla, N.I. Papanicolaou, D.D. Vvedensky, und L.T. Wille. Kluwer, Dordrecht, 87–97 (2002).

Scheffler, M. und P. Kratzer: Ab inito thermodynamics and statistical mechanics of diffusion, growth, and self-assembly of quantum dots. In: Atomistic Aspects of Epitaxial Growth. (Hrsg.): M. Kotrla, N.I. Papanicolaou, D.D. Vvedensky, und L.T. Wille. (NATO Science Series II: Mathematics, Physics and Chemistry, Vol. 65). Kluwer, The Netherlands, 355–369 (2002).

Fichthorn, K.A. und M. Scheffler: Substrate-mediated interaction on Ag(111) surfaces from first principles. In: Collective diffusion on surfaces: correlation effects and adatom interactions. (Hrsg.): M.C. Tringides und Z. Chvoj. (NATO science series: 2, Mathematics, physics and chemistry, Vol. 29). Kluwer, Dordrecht, 225–236 (2001).

Schwarz, G., J. Neugebauer und M. Scheffler: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000. (Hrsg.): N. Miura und T. Ando. (Springer proceedings in physics, Vol. 87). Springer, Berlin, 1377–1380 (2001).

Scheffler, M. und C. Stampfl: Theory of Adsorption on Metal Substrates. In: Electronic Structure. (Hrsg.): K. Horn und M. Scheffler. (Handbook of Surface Science, Vol. 2). Elsevier, Amsterdam, 286–356 (2000).

Ratsch, C., P. Ruggerone und M. Scheffler: Study of strain and temperature dependence of metal epitaxy. In: Morphological Organization in Epitaxial Growth and Removal. (Hrsg.): Z. Zhang und M.G. Lagally. (Series on directions in condensed matter physics, Vol. 14). World Scientific, Singapore, 3–29 (1998).

Ratsch, C., P. Ruggerone und M. Scheffler: Density-functional theory of surface diffusion and epitaxial growth of metals. In: Surface Diffusion: Atomistic and Collective Processes. (Hrsg.): M.C. Tringides. (NATO ASI Series B: Physics, Vol. 360). Springer, Berlin, 83–101 (1997).

Ruggerone, P., C. Ratsch und M. Scheffler: Density-functional theory of epitaxial growth of metals. In: Growth and properties of ultrathin epitaxial layers. (Hrsg.): D.A. King und D.P. Woodruff. (The chemical physics of solid surfaces, Vol. 8). Elsevier, Amsterdam, 490–544 (1997).

Scheffler, M., V. Fiorentini und S. Oppo: Homoepitaxial growth of metals and the role of surfactants. In: Surface science: principles and current applications ; [based on invited lectures presented ... at the German-Australian Workshop on Surface Science held at Schloß Ringberg, Tegernsee, Germany, in January 1994]. (Hrsg.): R.J. MacDonald, E.C. Taglauer, und K.R. Wandelt. Springer, Berlin, 219–231 (1996).

Pankratov, O. und M. Scheffler: Clustering and Correlations on GaAs - Metal Interface. In: Semiconductor Interfaces at the Sub-Nanometer Scale. (Hrsg.): H.W.M. Salemink und M.D. Pashley. (NATO ASI Series E: Applied Sciences, Vol. 243). Springer, Dordrecht, 121–126 (1993).

Scherz, U. und M. Scheffler: Density-functional theory of sp-bonded defects in III/V semiconductors. In: Imperfections in III/V Materials. (Hrsg.): E.R. Weber. (Semiconductors and Semimetals, Vol. 38). Academic Press, Boston, 1–58 (1993).

Scheffler, M. und U. Scherz: Resonant Raman scattering at point defects in GaAs. In: Defects in Semiconductors. (Hrsg.): H.J. von Bardeleben. (Materials Science Forum, Vol. 10-12). Trans Tech Publications Ltd., Switzerland, 353–358 (1986).

Weinert, C.M. und M. Scheffler: Chalcogen and vacancy pairs in silicon: Electronic structure and stabilities. In: Defects in Semiconductors. (Hrsg.): H.J. von Bardeleben. (Materials Science Forum, Vol. 10-12). Trans Tech Publications Ltd., Switzerland, 25–30 (1986).

Scheffler, M. und A.M. Bradshaw: The electronic structure of adsorbed layers. In: Adsorption at Solid Surfaces. (The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis, Vol. 2). Elsevier, Amsterdam, 165–257 (1983).