Publikationen von Matthias Scheffler

Scheffler, M.: Electronic structure of simple deep-level defects in semiconductors. In: Festkörperprobleme. (Hrsg.): P. Grosse. (Festkörperprobleme, Vol. XXII). Vieweg, Braunschweig, 115–148 (1982).

Scheffler, M. und R. Zimmermann (Hrsg.): 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996. World Scientific, Singapore (1996).

Baldauf, C., M. Ropo, V. Blum und M. Scheffler: How mono-valent cations bend peptide turns and a first-principles database of amino acids and dipeptides. In: Proceedings of the International Conference of Computational Methods in Sciences and Engineering 2014: (ICCMSE 2014). (Hrsg.): T.E. Simos, Z. Kalogiratou, und T. Monovasilis. (AIP Conference Proceedings, Vol. 1618). AIP Publishing, Melville, NY, 119–120 (2014).

Mulakaluri, N., R. Pentcheva, W. Moritz, M. Weiland und M. Scheffler: Theoretical evidence of a mixed adsorption mode of water on Fe₃O₄(001). In: Geochimica et Cosmochimica Acta., A913–A913 (2009).

Buecking, N., S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, K. Reimann, P. Kratzer, M. Scheffler und A. Knorr: Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In: Proceedings of SPIE., 689209 (2008).

Carlsson, J.M. und M. Scheffler: Curvature effects on vacancies in nanotubes. In: Electronic Properties of Novel Nanostructures. (Hrsg.): H. Kuzmany, J. Fink, M. Mehring, und S. Roth. (AIP Conference Proceedings, Vol. 786). American Institute of Physics, Melville, New York, 432–435 (2005).

Pentcheva, R., F. Wagner, W. Moritz und M. Scheffler: Structure, energetics and properties of Fe₃O₄(001) from first principles. In: High Performance Computing in Science and Engineering, Munich 2004. (Hrsg.): S. Wagner, W. Hanke, A. Bode, und F. Durst. Springer, Berlin, 375–381 (2005).

Ratsch, C., A. Fielicke, J. Behler, M. Scheffler, G.von Helden und G. Meijer: Structure determination of small metal clusters by density-functional theory and comparison with experimental far-infrared spectra. In: Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show. (Nanotech 2005, Vol. 2)., 1–4 (2005).

Santoprete, R., B. Koiller, R.B. Capaz, P. Kratzer und M. Scheffler: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 745–746 (2005).

Wu, H., P. Kratzer und M. Scheffler: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Hrsg.): J. Menendez und C.G. Van de Walle. (AIP Conference Proceedings, Vol. 772). American Institute of Physics, USA, 311–312 (2005).

Scheffler, M., P. Kratzer und L.G. Wang: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics., 3–7 (2000).

Grosse, F., A. Kley, M. Scheffler und R. Zimmermann: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors. (Hrsg.): D. Gershoni. World Scientific, Singaporeim Druck

Grosse, F., J. Neugebauer und M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Hrsg.): G. David. World Scientific, Singaporeim Druck

Neugebauer, J., T.K. Zywietz, M. Scheffler und J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Hrsg.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).

Groß, A. und M. Scheffler: Steering and Isotope Effects in the Dissociative Adsorption of H₂/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996. (Hrsg.): V. Kumar, S. Sengupta, und B. Raj. Springer, Berlin, 285–292 (1997).

Pehlke, E., N. Moll und M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Hrsg.): V. Fiorentini und F. Meloni. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).

Petersen, M., P. Ruggerone und M. Scheffler: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Hrsg.): V. Fiorentini. (Conference proceedings / Italian Physical Society, Vol. 55). Italian Physical Society, Bologna, 43–52 (1997).

Ruggerone, P., A. Kley und M. Scheffler: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Hrsg.): V. Fiorentini. (Conference proceedings / Italian Physical Society, Vol. 55). Italian Physical Society, Bologna, 33–42 (1997).

Groß, A., M. Bockstedte und M. Scheffler: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Hrsg.): M. Scheffler. World Scientific, Singapore, 951–954 (1996).

Kley, A. und M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Hrsg.): M. Scheffler., 1031–1034 (1996).