Publikationen von Matthias Scheffler

Stampfl, C., M. Scheffler, H. Over, J. Burchhardt, M. Nielsen, D. Adams und W. Moritz: Identification of stable and metastable adsorption sites for K adsorbed on Al(111). Physical Review Letters 69 (10), 1532–1535 (1992).

Wachutka, G., A. Fleszar, F. Máca und M. Scheffler: Self-consistent Green-function method for the calculation of electronic properties of localized defects at surfaces and in the bulk. Journal of Physics: Condensed Matter 4, 2831–2844 (1992).

Alves, J.L.A., J. Hebenstreit und M. Scheffler: Calculated atomic structures and electronic properties of GaP, InP, GaAs and InAs(110) surfaces. Physical Review B 44 (12), 6188–6198 (1991).

Gonze, X., R. Stumpf und M. Scheffler: Analysis of fully separable potentials. Physical Review B 44, 8503–8513 (1991).

Hebenstreit, J., M. Heinemann und M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, 1031–1034 (1991).

Methfessel, M., D. Hennig, S. Weber und M. Scheffler: Ab-initio calculation of the effect of d-band occupation on the relaxation of transition metal surfaces. Proc. 75th We-Heraeus-Seminar and 21st Annual Internat. Symposium on Electronic Structure of Solids 174–176 (1991).

Methfessel, M. und M. Scheffler: Full-potential LMTO calculations for atomic relaxations at semiconductor-semiconductor interfaces. Physica B 172, 175–183 (1991).

Overhof, H., M. Scheffler und C.C. Weinert: Formation energies, electronic structure, and hyperfine fields of chalcogen point defects and defect pairs in silicon. Physical Review B 43, 12494–12506 (1991).

Scheffler, M., C. Droste, A. Fleszar, F. Máca, G. Wachutka und G. Barzel: A self-consistent surface-Green-function (SSGF) method. Physica B 172, 143–153 (1991).

Schmalz, A., S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams und E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

Beeler, F., O.K. Andersen und M. Scheffler: Electronic and Magnetic Structure of 3d-Transition-Metal Point Defects in Silicon Calculated from First Principles. Physical Review B 41, 1603–1624 (1990).

Biernacki, S. und M. Scheffler: First-principles calculations of thermodynamic potentials of perfect-crystal semiconductors and for defects in semiconductors. Proc. 4th Brazilian School of Semiconductor Physics 188–198 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio und M. Scheffler: Anion-antisite-like defects in III-V compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio und M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Proc.20th Int. Conf. on the Physicsof Semiconductors (ICPS-20) 469–472 (1990).

Caldas, M.J., J. Dabrowski, A. Fazzio und M. Scheffler: Anion-Antisite-like Defects in III-V Compounds. Physical Review Letters 65 (16), 2046–2049 (1990).

Caldas, M.J., A. Fazzio, J. Dabrowski und M. Scheffler: Anion-Antisite Defects in GaAs: As and Sb. Internat. Journal of Quantum Chemistry: Quantum Chemistry Symposium 24, 563–567 (1990).

Dabrowski, J., M. Scheffler und R. Strehlow: Silicon Donor in Gallium Arsenide and its Relation to DX Centers. Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 489–492 (1990).

Doyen, G., E. Koetter, J.P. Vigneron und M. Scheffler: Theory of scanning tunneling microscopy. Applied Physics A 51, 281–288 (1990).

Doyen, G., E. Koetter, J.P. Vigneron und M. Scheffler: Theory of Scanning Tunneling Microscopy. Applied Physics A: Materials Science and Processing 51, 281–288 (1990).

Gonze, X., P. Käckell und M. Scheffler: Ghost states for separable, norm-conserving, ab initio pseudopotentials. Physical Review B 41 (17), 12264–12267 (1990).