Publikationen von Martina Heinemann

Heinemann, M. und M. Scheffler: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, 628–631 (1992).

Ourmazd, A., M. Scheffler, M. Heinemann und J.-L. Rouviere: Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, 24–31 (1992).

Hebenstreit, J., M. Heinemann und M. Scheffler: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, 1031–1034 (1991).

Hebenstreit, J., M. Heinemann und M. Scheffler: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20) 215–218 (1990).

Hebenstreit, J., M. Heinemann und M. Scheffler: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, 71–75 (1990).

Heinemann, M. und M. Scheffler: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces. (Hrsg.): B. Lengeler, H. Lüth, W. Mönch, und J. Pollmann. World Scientific, Singapore, 297–300 (1994).

Heinemann, M.: Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen. TU Berlin