Publikationen von Jörg Neugebauer

Ebert, P., P. Quadbeck, K. Urban, B. Henninger, K. Horn, G. Schwarz, J. Neugebauer und M. Scheffler: Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters 79 (18), 2877–2879 (2001).

Grosse, F. und J. Neugebauer: Limits and accuracy of valence force field models for In_xGa_1-xN alloys. Physical Review B 63 (08), 085207 (2001).

Lee, C.D., R.M. Feenstra, A.L.da Rosa, J. Neugebauer und J.E. Northrup: Silicon on GaN(0001) and (0001) surfaces. Journal of Vacuum Science and Technology B 19 (4), 1619–1625 (2001).

Neugebauer, J.: Ab initio analysis of surface structure and adatom kinetics of group-III nitrides. Physica Status Solidi B 227 (1), 93–114 (2001).

Van de Walle, C.G., S. Limpijumnong und J. Neugebauer: First-principles studies of beryllium doping of GaN. Physical Review B 63 (24), 245205 (2001).

Chen, H., R.M. Feenstra, J. Northrup, T.K. Zywietz, J. Neugebauer und D.W. Greve: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), 2284–2289 (2000).

Chen, H., R.M. Feenstra, J.E. Northrup, T.K. Zywietz, J. Neugebauer und D.W. Greve: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), 1902–1905 (2000).

Ebert, P., K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer und M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).

Feenstra, R.M., H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, T.K. Zywietz, J. Neugebauer und D.W. Greve: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), 601–606 (2000).

Neugebauer, J., T.K. Zywietz, M. Scheffler und J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).

Northrup, J., J. Neugebauer, R.M. Feenstra und A.R. Smith: Structure of GaN(0001): The laterally contracted Ga bilayer model. Physical Review B 61 (4), 9932–9935 (2000).

Van de Walle, C.G. und J. Neugebauer: Arsenic impurities in GaN. Applied Physics Letters 76 (8), 1009–1011 (2000).

Northrup, J.E. und J. Neugebauer: Indium induced changes in GaN(0001) surface morphology. Physical Review B 60 (12), R8473–R8476 (1999).

Northrup, J.E., L.T. Romano und J. Neugebauer: Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. Applied Physics Letters 74 (16), 2319–2322 (1999).

Smith, A.R., R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer und J.E. Northrup: GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surface Science 423 (1), 70–84 (1999).

Stampfl, C., J. Neugebauer und C.G. Van de Walle: Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B 59 (1-3), 253–257 (1999).

Van de Walle, C.G. und J. Neugebauer: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, 439 (1999).

Van de Walle, C.G., J. Neugebauer, C. Stampfl, M.D. McCluskey und N.M. Johnson: Defects and Defect Reactions in Semiconductor Nitrides. Acta Physica Polonica A 96 (5), 613–627 (1999).

Van de Walle, C.G., C. Stampfl, J. Neugebauer, M.D. McCluskey und N.M. Johnson: Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research 4 (S1), 901–912 (1999).

Zywietz, T.K., J. Neugebauer und M. Scheffler: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), 1695–1697 (1999).