Publications of Matthias Scheffler

Journal Article

C. Stampfl and M. Scheffler: Energy barriers and chemical properties in the coadsorption of carbon monoxide and oxygen on Ru(0001). Physical Review B 65 (15), 155417 (2002).

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Journal Article

M. Todorova, W. Li, M.V. Ganduglia-Pirovano, C. Stampfl, K. Reuter and M. Scheffler: Role of sub-surface oxygen in oxide formation at transition metal surfaces. Physical Review Letters 89 (9), 096103 (2002).

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Journal Article

X.-G. Wang, J.R. Smith and M. Scheffler: Effect of hydrogen on Al₂O₃/Cu interfacial structure and adhesion. Physical Review B 66 (7), 073411 (2002).

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Journal Article

P. Kratzer and M. Scheffler: Surface Knowledge: Toward a Predictive Theory of Materials. Computing in Science & Engineering 3 (6), 16–25 (2001).

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Journal Article

P. Ebert, P. Quadbeck, K. Urban, B. Henninger, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters 79 (18), 2877–2879 (2001).

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Journal Article

K. Reuter and M. Scheffler: Surface core-level shifts at an oxygen-rich Ru surface: O/Ru(0001) vs. RuO_2(110). Surface Science 490 (1-2), 20–28 (2001).

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Journal Article

R. Dohmen, J. Pichlmeier, M. Petersen, F. Wagner and M. Scheffler: Parallel FP-LAPW for distributed-memory machines. Computing in Science & Engineering 3 (4), 18–29 (2001).

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Journal Article

E. Penev, P. Kratzer and M. Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001).

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Journal Article

L.G. Wang, P. Kratzer, M. Scheffler and Q.K.K. Liu: Island dissolution during capping layer growth interruption. Applied Physics A 73 (2), 161–165 (2001).

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Journal Article

S.B. Healy, C. Filippi, P. Kratzer, E. Penev and M. Scheffler: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001).

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Journal Article

K. Tatarczyk, A. Schindlmayr and M. Scheffler: Exchange-correlation kernels for excited states in solids. Physical Review B 63 (23), 235106–1-235106–7 (2001).

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Journal Article

M.V. Ganduglia-Pirovano, M. Scheffler, A. Baraldi, S. Lizzit, G. Comelli, G. Paolucci and R. Rosei: Oxygen induced Rh 3d_5/2 surface core-level shifts on Rh(111). Physical Review B 63 (20), 205415–1-205415–11 (2001).

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Journal Article

S. Lizzit, A. Baraldi, A. Groso, K. Reuter, M.V. Ganduglia-Pirovano, C. Stampfl, M. Scheffler, M. Stichler, C. Keller, W. Wurth and D. Menzel: Surface core level shifts of clean and oxygen covered Ru(0001). Physical Review B 63 (20), 205419 (2001).

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Journal Article

P.J. Feibelman, B. Hammer, J.K. Norskov, F. Wagner, M. Scheffler, R. Stumpf, R. Watwe and J. Dumesic: The CO/Pt(111) puzzle. The Journal of Physical Chemistry B 105 (18), 4018–4025 (2001).

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Journal Article

J. Márquez, P. Kratzer, L. Geelhaar, K. Jacobi and M. Scheffler: Atomic structure of the stoichiometric GaAs(114) surface. Physical Review Letters 86 (1), 115–118 (2001).

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Journal Article

S.-H. Lee, W. Moritz and M. Scheffler: GaAs(001) surface under conditions of low As pressure: Evidence for a novel surface geometry. Physical Review Letters 85 (18), 3890–3893 (2000).

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Journal Article

L.G. Wang, P. Kratzer and M. Scheffler: Energetics of InAs Thin Films and Islands on the GaAs(001) Substrate. Japanese Journal of Applied Physics 39 (7B), 4298–4301 (2000).

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Journal Article

P. Ebert, K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).

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Journal Article

K.A. Fichthorn and M. Scheffler: Island nucleation in thin-film epitaxy: A first-principles investigation. Physical Review Letters 84 (23), 5371–5374 (2000).

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