Publications of Matthias Scheffler

N. Buecking, S. Butscher, M. Richter, C. Weber, S. Declair, M. Woerner, K. Reimann, P. Kratzer, M. Scheffler and A. Knorr: Theory of electron-phonon interactions on nanoscales: semiconductor surfaces and two dimensional electron gases. In: Proceedings of SPIE., 689209 (2008).

R. Santoprete, B. Koiller, R.B. Capaz, P. Kratzer and M. Scheffler: Strain effects on the electronic and optical properties of InAs/GaAs quantum dots: Tight-binding study. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Eds.): J. Menendez and C.G. Van de Walle. (AIP Conference Proceedings). American Institute of Physics, USA, 745–746 (2005).

H. Wu, P. Kratzer and M. Scheffler: Ab initio study of transition-metal silicide films on Si(001). In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. (Eds.): J. Menendez and C.G. Van de Walle. (AIP Conference Proceedings). American Institute of Physics, USA, 311–312 (2005).

J.M. Carlsson and M. Scheffler: Curvature effects on vacancies in nanotubes. In: Electronic Properties of Novel Nanostructures. (Eds.): H. Kuzmany, J. Fink, M. Mehring, and S. Roth. (AIP Conference Proceedings). American Institute of Physics, Melville, New York, 432–435 (2005).

R. Pentcheva, F. Wagner, W. Moritz and M. Scheffler: Structure, energetics and properties of Fe₃O₄(001) from first principles. In: High Performance Computing in Science and Engineering, Munich 2004. (Eds.): S. Wagner, W. Hanke, A. Bode, and F. Durst. Springer, Berlin, 375–381 (2005).

C. Ratsch, A. Fielicke, J. Behler, M. Scheffler, G.von Helden and G. Meijer: Structure determination of small metal clusters by density-functional theory and comparison with experimental far-infrared spectra. In: Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show. (Nanotech 2005)., 1–4 (2005).

M. Scheffler, P. Kratzer and L.G. Wang: Ab initio thermodynamics and statistics of semiconductor growth, and self-assembly of quantum dots. In: Proceedings of the 4th Symposium on Atom-Scale Surface and Interface Dynamics., 3–7 (2000).

F. Grosse, A. Kley, M. Scheffler and R. Zimmermann: Self-organized growth on V-grooved substrates. In: Proc. 24th Int. Conf. on the Physics of Semiconductors. (Ed.): D. Gershoni. World Scientific, Singaporein press

F. Grosse, J. Neugebauer and M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Ed.): G. David. World Scientific, Singaporein press

J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).

A. Groß and M. Scheffler: Steering and Isotope Effects in the Dissociative Adsorption of H₂/Pd(100). In: Frontiers in Materials Modelling and Design: Proceedings of the Conference on Frontiers in Materials Modelling and Design, Kalpakkam, 20–23 August 1996. (Eds.): V. Kumar, S. Sengupta, and B. Raj. Springer, Berlin, 285–292 (1997).

E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of quantum dots. In: Advances in Computational Materials Science. (Eds.): V. Fiorentini and F. Meloni. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 23–32 (1997).

M. Petersen, P. Ruggerone and M. Scheffler: He scattering from metal surfaces. In: Proceedgins VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): V. Fiorentini. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 43–52 (1997).

P. Ruggerone, A. Kley and M. Scheffler: Microscopic processes behind metal homoepitaxy. In: Proceedings VI Italian-Swiss Workshop on Advances in Computational Materials Science. (Ed.): V. Fiorentini. (Conference proceedings / Italian Physical Society). Italian Physical Society, Bologna, 33–42 (1997).

A. Groß, M. Bockstedte and M. Scheffler: Ab initio Molecular Dynamics Study of D₂ Desorption from Si(100). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): M. Scheffler. World Scientific, Singapore, 951–954 (1996).

A. Kley and M. Scheffler: Diffusivity of Ga and Al adatoms on GaAs(001). In: 23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; [proceedings]. (Ed.): M. Scheffler., 1031–1034 (1996).

E. Pehlke, N. Moll and M. Scheffler: The equilibrium shape of InAs quantum dots grown on a GaAs(001) substrate. In: 23rd International Conference on the Physics of Semiconductors. (Ed.): R. Zimmermann. World Scientific, Singapore, 1301–1304 (1996).

P. Ruggerone, B. Kohler, S. Wilke and M. Scheffler: Electronic origin of the H-induced phonon anomalies on Mo(110). In: Electronic Surface and Interface States on Metallic Systems. (Ed.): E. Bertel. World Scientific, Singapore, 113–126 (1995).

M. Heinemann and M. Scheffler: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces. (Eds.): B. Lengeler, H. Lüth, W. Mönch, and J. Pollmann. World Scientific, Singapore, 297–300 (1994).

S. Oppo, V. Fiorentini and M. Scheffler: Surface alloying and surfactant action of Sb on Ag(111). In: Materials Research Society Symposium Proceedings. Materials Research Society, New York, 323–328 (1994).