Publications of Jens Paggel

P. Baumgärtel, J. Paggel, M. Hasselblatt, K. Horn, V. Fernandez, O. Schaff, J.H. Weaver, A.M. Bradshaw, D.P. Woodruff, E. Rotenberg and J. Denlinger: Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction. Physical Review B 59 (20), 13014–13019 (1999).

J. Paggel, G. Neuhold, H. Haak and K. Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), 221–235 (1998).

T. Chassé, G. Neuhold, J. Paggel and K. Horn: Investigation of the Sn/GaP(110) interface by core level photoemission: interface reaction, growth morphology and surface photovoltage effects. Applied Surface Science 115 (4), 326–335 (1997).

G. Neuhold, T. Chassé, J. Paggel and K. Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), 8623–8626 (1996).

J. Paggel, W. Theis, K. Horn, C. Jung, C. Hellwig and H. Petersen: Correlation of surface core levels and structural building blocks for the Si(111)-7×7 reconstruction through high-resolution core-level spectroscopy. Physical Review B 50 (24), 18 686–18 689 (1994).

H. Öfner, R. Hofmann, J. Kraft, F.P. Netzer, J. Paggel and K. Horn: Metal-overlayer-induced charge-transfer effects in thin SiO₂-Si structures. Physical Review B 50 (20), 15 120–15 126 (1994).

J. Paggel and M. Förster: An artefact in scanning tunneling microscopy images of highly oriented pyrolytic graphite. Applied Physics A 59, 419–425 (1994).

T. Chassé, J. Paggel, G. Neuhold, W. Theis and K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).

J. Paggel: Elektronische und geometrische Struktur von Metall/Halbleitergrenzflächen: Na/Si(111). Freie Universität Berlin