Publications of Evgeni Penev

Journal Article (7)

2004
Journal Article
E. Penev, P. Kratzer and M. Scheffler: Atomic structure of the GaAs(001)-c(4 x 4) surface: first-principles evidence for diversity of heterodimer motifs. Physical Review Letters 93 (14), 146102–1-146102–4 (2004).
Journal Article
E. Penev, S. Stojkovic, P. Kratzer and M. Scheffler: Anisotropic diffusion of In adatoms on pseudomorphic InxGa1-xAs(001) films: First-principles total energy calculations. Physical Review B 69, 115335–1-115335–10 (2004).
2003
Journal Article
P. Kratzer, E. Penev and M. Scheffler: Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations. Applied Surface Science 216 (1-4), 436–446 (2003).
2002
Journal Article
P. Kratzer, E. Penev and M. Scheffler: First-principles studies of kinetics in epitaxial growth of III-V semiconductors. Applied Physics A 75, 79–88 (2002).
2001
Journal Article
E. Penev, P. Kratzer and M. Scheffler: Effect of strain on surface diffusion in semiconductor heteroepitaxy. Physical Review B 64 (8), 085401 (2001).
Journal Article
S.B. Healy, C. Filippi, P. Kratzer, E. Penev and M. Scheffler: The role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. Physical Review Letters 87 (01), 016105 (2001).
1999
Journal Article
E. Penev, P. Kratzer and M. Scheffler: Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001). Journal of Chemical Physics 110 (8), 3986–3994 (1999).

Conference Paper (1)

2005
Conference Paper
E. Penev and P. Kratzer: First-principles study of InAs/GaAs(001) heteroepitaxy. In: Quantum Dots: Fundamentals, Applications,and Frontiers: proceedings of the NATO ARW on Quantum Dots ; Amoudara, Crete, Greece from 20 to 24 July 2003. (Eds.): B. Joyce, P. Kelires, A. Naumovets, and D. Vvedensky. (NATO Science Series II: Mathematics, Physics and Chemistry). Springer, The Netherlands, 27–42 (2005).

Thesis - PhD (1)

2002
Thesis - PhD
E. Penev: On the theory of surface diffusion in InAs/GaAs(001) heteroepitaxy. Technische Universität Berlin
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