Publications of Georg Neuhold

Journal Article (9)

2000
Journal Article
D. Wolfframm, D.A. Evans, G. Neuhold and K. Horn: Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics 87 (8), 3905–3911 (2000).
1998
Journal Article
S.R. Barman, S.A. Ding, G. Neuhold, K. Horn, D. Wolfframm and D.A. Evans: Electronic band structure of zinc blende. Physical Review B 58 (11), 7053–7058 (1998).
Journal Article
J. Paggel, G. Neuhold, H. Haak and K. Horn: Growth morphology and electronic structure of Na films on Si(111)-(7×7) and Si(111)-Na(3×1). Surface Science 414 (1-2), 221–235 (1998).
Journal Article
G. Neuhold, S.R. Barman, K. Horn, W. Theis, P. Ebert and K. Urban: Enhanced surface metallic density of states in icosahedral quasicrystals. Physical Review B 58 (2), 734–738 (1998).
Journal Article
K.O. Magnusson, G. Neuhold, K. Horn and D.A. Evans: Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states. Physical Review B 57 (15), 8945–8950 (1998).
1996
Journal Article
G. Neuhold, T. Chassé, J. Paggel and K. Horn: Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B 54 (12), 8623–8626 (1996).
Journal Article
S.A. Ding, G. Neuhold, J.H. Weaver, P. Häberle, K. Horn, O. Brandt, H. Yang and K. Ploog: Electronic structure of cubic gallium nitride films grown on GaAs. Journal of Vacuum Science and Technology. A 14 (3), 819–824 (1996).
Journal Article
D. Wolfframm, P. Bailey, D.A. Evans, G. Neuhold and K. Horn: Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure. Journal of Vacuum Science and Technology A 14 (3), 844–848 (1996).
1994
Journal Article
T. Chassé, J. Paggel, G. Neuhold, W. Theis and K. Horn: Photoemission study of the Cs⧸GaP(110) interface at low temperatures. Surface Science 307-309 (A), 295–302 (1994).

Thesis - PhD (1)

1996
Thesis - PhD
G. Neuhold: Über die Valenzbandstruktur epitaktischer Metallfilme. Freie Universität Berlin
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