Publications of Momme Winkelnkemper

Journal Article (5)

Journal Article
Q. Yan, P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, M. Scheffler and C.G. Van de Walle: Band parameters and strain effects in ZnO and group-III nitrides. Semiconductor Science and Technology 26, 014037 (2011).
Journal Article
P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer and M. Scheffler: Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN. Physical Review B 77 (7), 075202 (2008).
Journal Article
M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmacher, A. Hoffmann and D. Bimberg: Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots. Journal of Applied Physics 101 (11), 113708 (2007).
Journal Article
R. Seguin, A. Schliwa, T.D. Germann, S. Rodt, K. Pötschke, A. Strittmatter, U.W. Pohl, D. Bimberg, M. Winkelnkemper, T. Hammerschmidt and P. Kratzer: Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots. Applied Physics Letters 89 (26), 263109 (2006).
Journal Article
M. Winkelnkemper, A. Schliwa and D. Bimberg: Interrelation of structural and electronic properties in InxGa1-xN/GaN quantum dots using an eight-band k · p model. Physical Review B 74 (15), 155322 (2006).
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