Publikationen von Momme Winkelnkemper

Yan, Q.; Rinke, P.; Winkelnkemper, M.; Qteish, A.; Bimberg, D.; Scheffler, M.; Van de Walle, C. G.: Band parameters and strain effects in ZnO and group-III nitrides. Semiconductor Science and Technology 26, 014037 (2011)

Rinke, P.; Winkelnkemper, M.; Qteish, A.; Bimberg, D.; Neugebauer, J.; Scheffler, M.: Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN. Physical Review B 77 (7), 075202 (2008)

Winkelnkemper, M.; Seguin, R.; Rodt, S.; Schliwa, A.; Reißmann, L.; Strittmacher, A.; Hoffmann, A.; Bimberg, D.: Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots. Journal of Applied Physics 101 (11), 113708 (2007)

Seguin, R.; Schliwa, A.; Germann, T. D.; Rodt, S.; Pötschke, K.; Strittmatter, A.; Pohl, U. W.; Bimberg, D.; Winkelnkemper, M.; Hammerschmidt, T. et al.; Kratzer, P.: Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots. Applied Physics Letters 89 (26), 263109 (2006)

Winkelnkemper, M.; Schliwa, A.; Bimberg, D.: Interrelation of structural and electronic properties in In_xGa_1-xN/GaN quantum dots using an eight-band k · p model. Physical Review B 74 (15), 155322 (2006)