Publications of Günther Schwarz

Journal Article (4)

Journal Article
M. Hedström, A. Schindlmayr, G. Schwarz and M. Scheffler: Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110). Physical Review Letters 97 (22), 226401 (2006).
Journal Article
P. Ebert, P. Quadbeck, K. Urban, B. Henninger, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors. Applied Physics Letters 79 (18), 2877–2879 (2001).
Journal Article
P. Ebert, K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).
Journal Article
G. Schwarz, A. Kley, J. Neugebauer, J. Neugebauer and M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).

Book Chapter (1)

Book Chapter
G. Schwarz, J. Neugebauer and M. Scheffler: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000. (Eds.): N. Miura and T. Ando. (Springer proceedings in physics). Springer, Berlin, 1377–1380 (2001).

Thesis - PhD (1)

Thesis - PhD
G. Schwarz: Untersuchungen zu Defekten auf und nahe der (110)-Oberfläche von GaAs und weiteren III-V-Halbleitern. Technische Universität Berlin

Thesis - Diploma (1)

Thesis - Diploma
G. Schwarz: Theoretische Untersuchungen zu Leerstellen auf der (110)-Oberfläche von GaP. Technische Universität Berlin Berlin
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