Publications of Jörg Neugebauer
All genres
Journal Article (65)
1998
Journal Article
J. Neugebauer, T.K. Zywietz, M. Scheffler, and : Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior. Physical Review Letters 80 (14), 3097–3100 (1998).
Journal Article
and J. Neugebauer: Possibility of a Mott-Hubbard ground state for the SiC(0001) surface. Physical Review B 57 (8), R4230–R4232 (1998).
Journal Article
G. Schwarz, A. Kley, J. Neugebauer, J. Neugebauer and M. Scheffler: Electronic and structural properties of vacancies on and below the GaP(110) surface. Physical Review B 58, 1392–1400 (1998).
Journal Article
, and J. Neugebauer: Theory of doping and defects in III-V nitrides. Journal of Crystal Growth 189/190, 505–510 (1998).
Journal Article
T.K. Zywietz, J. Neugebauer and M. Scheffler: Adatom diffusion at GaN(0001) and (0001̄) surfaces. Applied Physics Letters 73 (4), 487–489 (1998).
Journal Article
T.K. Zywietz, J. Neugebauer, M. Scheffler and : Novel reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors. Psi-k Newsletter 29, 112–124 (1998).
Journal Article
T.K. Zywietz, J. Neugebauer, M. Scheffler, and : Surface structures, surfactants and diffusion at cubic and wurtzite GaN. MRS Internet Journal of Nitride Semiconductor Research 3, e26 (1998).
1997
Journal Article
M. Bockstedte, A. Kley, J. Neugebauer and M. Scheffler: Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics. Computer Physics Communications 107 (1-3), 187–222 (1997).
Journal Article
, and J. Neugebauer: Atomic structure and stability of AIN(0001) and (0001) surfaces. Physical Review B 55 (20), 13878–13883 (1997).
Journal Article
, and J. Neugebauer: Energetics of H and NH2 on GaN(101̅0) and implications for the origin of nanopipe defects. Physical Review B 56 (8), R4325–R4328 (1997).
Journal Article
, , , J. Neugebauer and : Reconstructions of the GaN(0001‾) surface. Physical Review Letters 79 (20), 3934–3937 (1997).
Journal Article
and J. Neugebauer: Small valence-band offsets at GaN/InGaN heterojunctions. Applied Physics Letters 70 (19), 2577–2579 (1997).
Journal Article
and J. Neugebauer: Defects and doping in III-V nitrides. Materials Science Forum 258-263, 19–26 (1997).
1996
Journal Article
, and J. Neugebauer: Energetics of AIN thin films and the implications for epitaxial growth on SiC. Physical Review B 54 (24), R17351–R17354 (1996).
1995
Journal Article
A. Kley, J. Neugebauer and M. Scheffler: Interface stability and valence-band offsets for the GaAs/ZnSe(001) heterojunction. Proc.of the 22nd International Conference on the Physics of Semiconductors 775–782 (1995).
1994
Journal Article
J. Bormet, J. Neugebauer and M. Scheffler: Chemical trends and bonding mechanisms for isolated adsorbates on Al(111). Physical Review B 49 (24), 17242–17252 (1994).
Journal Article
J. Neugebauer and M. Scheffler: Alkali-metal adsorbates on aluminum (111): The interplay and competition of adsorbate-substrate and adsorbate-adsorbate interactions. Progress in Surface Science 46 (2-3), 295–304 (1994).
Journal Article
C. Stampfl, J. Neugebauer and M. Scheffler: Alkali-metal adsorption on Al(111) and Al(100). Surface Science 307-309 (Part A), 8–15 (1994).
Journal Article
C. Stampfl, J. Neugebauer and M. Scheffler: Theoretical evidence for unusual bonding geometry and phase transitions of Na on Al(001). Surface Review and Letters 1 (2-3), 213–219 (1994).
1993
Journal Article
J. Neugebauer and M. Scheffler: Theory of adsorption and desorption in high electric fields. Surface Science 287/288 (2), 572–576 (1993).