Publications of Jörg Neugebauer

J. Neugebauer and M. Scheffler: Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters 71 (4), 577–580 (1993).

M. Scheffler, J. Neugebauer and R. Stumpf: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, A91–A94 (1993).

B. Wenzien, J. Bormet, J. Neugebauer and M. Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, 559–563 (1993).

J. Neugebauer and M. Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), 16067–16080 (1992).

A. Schmalz, S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

Northrup, J.E., J. Neugebauer, D.C. Look, S.F. Chichibu and H. Riechert (Eds.): GaN and related alloys—2001. (MRS Symposium Proceedings, Vol. 693). Materials Research Society, Warrendale, PA (2002).

J. Neugebauer: Surface structure and adatom kinetics of group-III nitrides. In: Nitride Semiconductors: Handbook on Materials and Devices. (Eds.): J. Neugebauer. (Eds.): P. Ruterana and M. Albrecht. WILEY-VCH, Weinheim, 295–318 (2003).

S. Limpijumnong, C.G. Van de Walle and J. Neugebauer: Stability, diffusion, and complex formation of beryllium in wurtzite GaN. In: GaN and Related Alloys - 2000. (Eds.): M.S. Shur, U.K. Mishra, and K. Katsumi. (Eds.): C. Wetzel and B. Gil. (Materials Reserach Society Symposium Proceedings). MRS, Pittsburgh, G4.3 (2001).

G. Schwarz, J. Neugebauer and M. Scheffler: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000. (Eds.): N. Miura and T. Ando. (Springer proceedings in physics). Springer, Berlin, 1377–1380 (2001).

F. Grosse and J. Neugebauer: Modeling of structural and elastic properties of In_xGa_1-xN alloys. In: Materials Issues and Modeling for Device Nanofabrication. (Eds.): L. Merhari, L.T. Wille, K.E. Gonsalves, M.F. Gyure, S. Matsui, and L.J. Whitman. (Materials Research Society Symposium Proceedings). Materials Research Society, Warrendale, PA, 215–222 (2000).

J. Neugebauer and C.G. Van de Walle: Theory of hydrogen in GaN. In: Hydrogen in semiconductors II. (Ed.): N.H. Nickel. (Semiconductors and semimetals). Acad. Press, Boston, 479–502 (1999).

C.G. Van de Walle, N.M. Johnson and J. Neugebauer: Hydrogen and acceptor compensation in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Eds.): S. Strite, I. Akasaki, H. Amano, and C. Wetzel. (EMIS datareview series). INSPEC, , 317–321 (1999).

C.G. Van de Walle and J. Neugebauer: Yellow luminescence in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Eds.): S. Strite, I. Akasaki, H. Amano, and C. Wetzel. (EMIS datareview series). INSPEC, , 313–316 (1999).

C.G. Van de Walle, J. Neugebauer and C. Stampfl: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Eds.): S. Strite, I. Akasaki, H. Amano, and C. Wetzel. (EMIS datareview series)., 275–280 (1999).

C.G. Van de Walle, J. Neugebauer and C. Stampfl: Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors. (Eds.): J.H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel. (EMIS datareview series). INSPEC, London, 281–283 (1999).

C.D. Lee, R.M. Feenstra, J.E. Northrup, L. Lymperakis and J. Neugebauer: Morphology and surface reconstructions of m-plane GaN. In: GaN and Related Alloys. (Ed.): C. Wetzel. (Materials Research Society Symposium Proceedings). Materials Research Society, Pittsburgh, Pa., L.4.1.1 (2003).

C.G. Van de Walle, J.E. Northrup and J. Neugebauer: Effects on stoichiometry on point defects and impurities in gallium nitride. In: Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds. (Eds.): P. Specht, T.R. Weatherford, P. Kiesel, T. Marek, and S. Malzer. (Physics of Microstructured Semiconductors). University of Erlangen, Erlangen, Germany, 11–18 (2002).

F. Grosse, J. Neugebauer and M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Ed.): G. David. World Scientific, Singaporein press

J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): D. Gershoni. World Scientific, Singapore, 235–242 (1999).

C.G. Van de Walle and J. Neugebauer: Theory of point defects and interfaces. In: MRS Proceedings., 861–870 (1997).