Publications of Jörg Neugebauer

Journal Article (65)

1993
Journal Article
J. Neugebauer and M. Scheffler: Mechanisms of island formation of alkali-metal adsorbates on Al(111). Physical Review Letters 71 (4), 577–580 (1993).
Journal Article
M. Scheffler, J. Neugebauer and R. Stumpf: A step from surface fiction towards surface science. Journal of Physics: Condensed Matter 5, A91–A94 (1993).
Journal Article
B. Wenzien, J. Bormet, J. Neugebauer and M. Scheffler: Electronic structure of (3 x 3)-R30°-Na and -K on Al(111): comparison of "normal" and substitutional adsorption sites. Surface Science 287/288, 559–563 (1993).
1992
Journal Article
J. Neugebauer and M. Scheffler: Adsorbate-substrate and adsorbate-adsorbate interactions of Na and K adlayers on Al(111). Physical Review B 46 (24), 16067–16080 (1992).
1991
Journal Article
A. Schmalz, S. Aminpirooz, L. Becker, J. Haase, J. Neugebauer, M. Scheffler, D.R. Batchelor, D.L. Adams and E. Bogh: Unusual chemisorption geometry of Na on Al(111). Physical Review Letters 67, 2163–2166 (1991).

Book (1)

2002
Book
Northrup, J.E., J. Neugebauer, D.C. Look, S.F. Chichibu and H. Riechert (Eds.): GaN and related alloys—2001. (MRS Symposium Proceedings, Vol. 693). Materials Research Society, Warrendale, PA (2002).

Book Chapter (9)

2003
Book Chapter
J. Neugebauer: Surface structure and adatom kinetics of group-III nitrides. In: Nitride Semiconductors: Handbook on Materials and Devices. (Eds.): J. Neugebauer. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>P. Ruterana</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>M. Albrecht</span></span> WILEY-VCH, Weinheim, 295–318 (2003).
2001
Book Chapter
S. Limpijumnong, C.G. Van de Walle and J. Neugebauer: Stability, diffusion, and complex formation of beryllium in wurtzite GaN. In: GaN and Related Alloys - 2000. (Eds.): M.S. Shur, U.K. Mishra, and K. Katsumi. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Wetzel</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>B. Gil</span></span> (Materials Reserach Society Symposium Proceedings). MRS, Pittsburgh, G4.3 (2001).
Book Chapter
G. Schwarz, J. Neugebauer and M. Scheffler: Point defects on III-V semiconductor surfaces. In: Proceedings of the 25th International Conference on the Physics of Semiconductors: Osaka, Japan, September 17 - 22, 2000. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>N. Miura</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>T. Ando</span></span> (Springer proceedings in physics). Springer, Berlin, 1377–1380 (2001).
2000
Book Chapter
F. Grosse and J. Neugebauer: Modeling of structural and elastic properties of InxGa1-xN alloys. In: Materials Issues and Modeling for Device Nanofabrication. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>L. Merhari</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>L.T. Wille</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>K.E. Gonsalves</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>M.F. Gyure</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Matsui</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>L.J. Whitman</span></span> (Materials Research Society Symposium Proceedings). Materials Research Society, Warrendale, PA, 215–222 (2000).
1999
Book Chapter
J. Neugebauer and C.G. Van de Walle: Theory of hydrogen in GaN. In: Hydrogen in semiconductors II. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>N.H. Nickel</span></span> (Semiconductors and semimetals). Acad. Press, Boston, 479–502 (1999).
Book Chapter
C.G. Van de Walle, N.M. Johnson and J. Neugebauer: Hydrogen and acceptor compensation in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Strite</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>I. Akasaki</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>H. Amano</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Wetzel</span></span> (EMIS datareview series). INSPEC, , 317–321 (1999).
Book Chapter
C.G. Van de Walle and J. Neugebauer: Yellow luminescence in GaN. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Strite</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>I. Akasaki</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>H. Amano</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Wetzel</span></span> (EMIS datareview series). INSPEC, , 313–316 (1999).
Book Chapter
C.G. Van de Walle, J. Neugebauer and C. Stampfl: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Strite</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>I. Akasaki</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>H. Amano</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Wetzel</span></span> (EMIS datareview series)., 275–280 (1999).
Book Chapter
C.G. Van de Walle, J. Neugebauer and C. Stampfl: Native point defects in GaN and related compounds. In: Properties, processing and applications of gallium nitride and related semiconductors. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>J.H. Edgar</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Strite</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>I. Akasaki</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>H. Amano</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Wetzel</span></span> (EMIS datareview series). INSPEC, London, 281–283 (1999).

Conference Paper (6)

2003
Conference Paper
C.D. Lee, R.M. Feenstra, J.E. Northrup, L. Lymperakis and J. Neugebauer: Morphology and surface reconstructions of m-plane GaN. In: GaN and Related Alloys. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>C. Wetzel</span></span> (Materials Research Society Symposium Proceedings). Materials Research Society, Pittsburgh, Pa., L.4.1.1 (2003).
2002
Conference Paper
C.G. Van de Walle, J.E. Northrup and J. Neugebauer: Effects on stoichiometry on point defects and impurities in gallium nitride. In: Proceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds. (Eds.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>P. Specht</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>T.R. Weatherford</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>P. Kiesel</span></span> <span style="font-style: normal; font-weight: normal"><span class='author_name'>T. Marek</span></span> and <span style="font-style: normal; font-weight: normal"><span class='author_name'>S. Malzer</span></span> (Physics of Microstructured Semiconductors). University of Erlangen, Erlangen, Germany, 11–18 (2002).
1999
Conference Paper
F. Grosse, J. Neugebauer and M. Scheffler: Phase stability and segregation of In_xGa_1-xN alloys. In: Proceedings 24th International Conference on the Physics of Semiconductors 1999. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>G. David</span></span> World Scientific, Singaporein press
Conference Paper
J. Neugebauer, T.K. Zywietz, M. Scheffler and J.E. Northrup: Surfaces and growth of group-III nitrides. In: 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. (Ed.): <span style="font-style: normal; font-weight: normal"><span class='author_name'>D. Gershoni</span></span> World Scientific, Singapore, 235–242 (1999).
1997
Conference Paper
C.G. Van de Walle and J. Neugebauer: Theory of point defects and interfaces. In: MRS Proceedings., 861–870 (1997).
Go to Editor View