Publications of Jörg Neugebauer

Journal Article (65)

2001
Journal Article
J. Neugebauer: Ab initio analysis of surface structure and adatom kinetics of group-III nitrides. Physica Status Solidi B 227 (1), 93–114 (2001).
Journal Article
C.D. Lee, R.M. Feenstra, A.L.da Rosa, J. Neugebauer and J.E. Northrup: Silicon on GaN(0001) and (0001) surfaces. Journal of Vacuum Science and Technology B 19 (4), 1619–1625 (2001).
Journal Article
C.G. Van de Walle, S. Limpijumnong and J. Neugebauer: First-principles studies of beryllium doping of GaN. Physical Review B 63 (24), 245205 (2001).
Journal Article
F. Grosse and J. Neugebauer: Limits and accuracy of valence force field models for InxGa1-xN alloys. Physical Review B 63 (08), 085207 (2001).
Journal Article
H. Chen, R.M. Feenstra, J.E. Northrup, J. Neugebauer and D.W. Greve: Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory. MRS Internet Journal of Nitride Semiconductor Research 6 (11), e11 (2001).
2000
Journal Article
H. Chen, R.M. Feenstra, J.E. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. Physical Review Letters 85 (9), 1902–1905 (2000).
Journal Article
H. Chen, R.M. Feenstra, J. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. Journal of Vacuum Science and Technology B 18 (4), 2284–2289 (2000).
Journal Article
P. Ebert, K. Urban, L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). Physical Review Letters 84 (25), 5816–5819 (2000).
Journal Article
J. Neugebauer, T.K. Zywietz, M. Scheffler and J. Northrup: Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).
Journal Article
J. Northrup, J. Neugebauer, R.M. Feenstra and A.R. Smith: Structure of GaN(0001): The laterally contracted Ga bilayer model. Physical Review B 61 (4), 9932–9935 (2000).
Journal Article
C.G. Van de Walle and J. Neugebauer: Arsenic impurities in GaN. Applied Physics Letters 76 (8), 1009–1011 (2000).
Journal Article
R.M. Feenstra, H. Chen, V. Ramachandran, C.D. Lee, A.R. Smith, J.E. Northrup, T.K. Zywietz, J. Neugebauer and D.W. Greve: Surface morphology of GaN surfaces during molecular beam epitaxy. Surface Review and Letters 7 (5-6), 601–606 (2000).
1999
Journal Article
C.G. Van de Walle, J. Neugebauer, C. Stampfl, M.D. McCluskey and N.M. Johnson: Defects and Defect Reactions in Semiconductor Nitrides. Acta Physica Polonica A 96 (5), 613–627 (1999).
Journal Article
J.E. Northrup and J. Neugebauer: Indium induced changes in GaN(0001) surface morphology. Physical Review B 60 (12), R8473–R8476 (1999).
Journal Article
C. Stampfl, J. Neugebauer and C.G. Van de Walle: Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B 59 (1-3), 253–257 (1999).
Journal Article
J.E. Northrup, L.T. Romano and J. Neugebauer: Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. Applied Physics Letters 74 (16), 2319–2322 (1999).
Journal Article
T.K. Zywietz, J. Neugebauer and M. Scheffler: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), 1695–1697 (1999).
Journal Article
A.R. Smith, R.M. Feenstra, D.W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer and J.E. Northrup: GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. Surface Science 423 (1), 70–84 (1999).
Journal Article
C.G. Van de Walle and J. Neugebauer: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, 439 (1999).
Journal Article
C.G. Van de Walle, C. Stampfl, J. Neugebauer, M.D. McCluskey and N.M. Johnson: Doping of AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research 4 (S1), 901–912 (1999).
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