Publications of Jörg Neugebauer
All genres
Journal Article (65)
2001
Journal Article
J. Neugebauer: Ab initio analysis of surface structure and adatom kinetics of group-III nitrides. Physica Status Solidi B 227 (1), 93–114 (2001).
Journal Article
A.L.da Rosa, J. Neugebauer and : Silicon on GaN(0001) and (0001) surfaces. , , Journal of Vacuum Science and Technology B 19 (4), 1619–1625 (2001).
Journal Article
J. Neugebauer: First-principles studies of beryllium doping of GaN. , and Physical Review B 63 (24), 245205 (2001).
Journal Article
F. Grosse and J. Neugebauer: Limits and accuracy of valence force field models for InxGa1-xN alloys. Physical Review B 63 (08), 085207 (2001).
Journal Article
J. Neugebauer and : Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory. , , , MRS Internet Journal of Nitride Semiconductor Research 6 (11), e11 (2001).
2000
Journal Article
T.K. Zywietz, J. Neugebauer and : Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces. , , , Physical Review Letters 85 (9), 1902–1905 (2000).
Journal Article
T.K. Zywietz, J. Neugebauer and : Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy. , , , Journal of Vacuum Science and Technology B 18 (4), 2284–2289 (2000).
Journal Article
L. Aballe, C.-H. Chen, K. Horn, G. Schwarz, J. Neugebauer and M. Scheffler: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110). , , Physical Review Letters 84 (25), 5816–5819 (2000).
Journal Article
J. Neugebauer, T.K. Zywietz, M. Scheffler and : Theory of surfaces and interfaces of group-III nitrides. Applied Surface Science 159-160, 355–359 (2000).
Journal Article
J. Neugebauer, and : Structure of GaN(0001): The laterally contracted Ga bilayer model. , Physical Review B 61 (4), 9932–9935 (2000).
Journal Article
C.G. Van de Walle and J. Neugebauer: Arsenic impurities in GaN. Applied Physics Letters 76 (8), 1009–1011 (2000).
Journal Article
T.K. Zywietz, J. Neugebauer and : Surface morphology of GaN surfaces during molecular beam epitaxy. , , , , , , Surface Review and Letters 7 (5-6), 601–606 (2000).
1999
Journal Article
J. Neugebauer, C. Stampfl, and : Defects and Defect Reactions in Semiconductor Nitrides. , Acta Physica Polonica A 96 (5), 613–627 (1999).
Journal Article
J. Neugebauer: Indium induced changes in GaN(0001) surface morphology. and Physical Review B 60 (12), R8473–R8476 (1999).
Journal Article
C. Stampfl, J. Neugebauer and : Doping of Al_xGa_1-xN alloys. Materials Science and Engineering B 59 (1-3), 253–257 (1999).
Journal Article
J. Neugebauer: Energetics of clean and In-covered GaN(1011) surfaces: Implications for inverted pyramid defect formation and the origin of chemical ordering in InGaN alloys. , and Applied Physics Letters 74 (16), 2319–2322 (1999).
Journal Article
T.K. Zywietz, J. Neugebauer and M. Scheffler: The adsorption of oxygen at GaN surfaces. Applied Physics Letters 74 (12), 1695–1697 (1999).
Journal Article
J. Neugebauer and : GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations. , , , , , Surface Science 423 (1), 70–84 (1999).
Journal Article
C.G. Van de Walle and J. Neugebauer: New insights in doping of III-nitrides and their alloys. Institute of Physics Conference Series 166, 439 (1999).
Journal Article
C. Stampfl, J. Neugebauer, and : Doping of AlGaN alloys. , MRS Internet Journal of Nitride Semiconductor Research 4 (S1), 901–912 (1999).