Publikationen von Harald Werner

Böhm, M. C.; Schulte, J.; Schütt, J.; Schedel-Niedrig, T.; Werner, H.; Schlögl, R.: Ba_xC₆₀ fullerides: π Electronic peculiarities of the C₆₀ molecule and their consequences for the solid state. International Journal of Quantum Chemistry 65 (4), S. 333 - 337 (1998)

Werner, H.; Herein, D.; Schulz, G.; Wild, U.; Schlögl, R.: Reaction pathways in methanol oxidation: kinetic oscillations in the copper/oxygen system. Catalysis Letters 49 (1-2), S. 109 - 119 (1997)

Schedel-Niedrig, T.; Böhm, M.C.; Werner, H.; Schulte, J.; Schlögl, R.: Electronic structure of barium-doped C₆₀. Physical Review B 55 (20), S. 13542 - 113556 (1997)

Belz, T.; Find, J.; Herein, D.; Pfänder, N.; Rühle, T.; Werner, H.; Wohlers, M.; Schlögl, R.: On the production of different carbon forms by electric arc graphite evaporation. Berichte der Bunsen-Gesellschaft 101 (4), S. 712 - 725 (1997)

Werner, H.; Timpe, O.; Herein, D.; Uchida, Y.; Pfänder, N.; Wild, U.; Schlögl, R.; Hibst, H.: Relevance of a glassy nanocrystalline state of Mo₄VO₁₄ for its action as selective oxidation catalyst. Catalysis Letters 44 (3-4), S. 153 - 163 (1997)

Wohlers, M.; Werner, H.; Belz, T.; Rühle, T.; Schlögl, R.: C₆₀: A host lattice for the intercalation of oxygen? Mikrochimica Acta 125 (1-4), S. 401 - 406 (1997)

Mack, S.; Baumann, H.; Gösele, U.; Werner, H.; Schlögl, R.: Analysis of Bonding‐Related Gas Enclosure in Micromachined Cavities Sealed by Silicon Wafer Bonding. Journal of the Electrochemical Society 144 (3), S. 1106 - 1111 (1997)

Jess, P.; Hubler, U.; Lang, H. P.; Güntherodt, H.-J.; Werner, H.; Schlögl, R.; Lüders, K.: Energy gap determination on polycrystalline Rb₂CsC₆₀ by scanning tunneling spectroscopy. Journal of Physics and Chemistry of Solids 58 (11), S. 1803 - 1805 (1997)

Kanowski, M.; Vieth, H.-M.; Lüders, K.; Buntkowsky, G.; Belz, T.; Werner, H.; Wohlers, M.; Schlögl, R.: The structure of fullerene black and the incorporation of C₆₀ investigated by ¹³C NMR. Carbon 35 (5), S. 685 - 695 (1997)

Wohlers, M.; Bauer, A.; Rühle, T.; Neitzel, F.; Werner, H.; Schlögl, R.: The Dark Reaction of C₆₀ and of C₇₀ with Molecular Oxygen at Atmospheric Pressure and Temperatures between 300 K and 800 K. Fullerene Science and Technology 5 (1), S. 49 - 83 (1997)

Nowitzke, G.; Wortmann, G.; Werner, H.; Schlögl, R.: EXAFS study of local structure at the alkali ions in superconducting K₂RbC₆₀, K₂CsC₆₀, Rb₂CsC₆₀, and Rb₃C₆₀. Physical Review B 54 (18), S. 13230 - 13241 (1996)

Böhm, M. C.; Schedel-Niedrig, T.; Werner, H.; Schlögl, R.; Schulte, J.: The solid state electronic structure of Ba₅C₆₀. Solid State Communications 99 (8), S. 577 - 582 (1996)

Kanowski, M.; Werner, H.; Schlögl, R.; Vieth, H.-M.; Lüders, K.: ⁸⁷Rb NMR investigations on binary and ternary fullerene compounds: Rb₃C₆₀, K₂RbC₆₀ and Rb₂CsC₆₀. Applied Magnetic Resonance 11 (2), S. 285 - 292 (1996)

Böhm, M. C.; Schedel-Niedrig, T.; Werner, H.; Schlögl, R.; Schulte, J.: Solid state electronic structure of Ba₃C₆₀ — A model approach. Solid State Communications 98 (5), S. 463 - 468 (1996)

Heinze, M.; Baenitz, M.; Lüders, K.; Werner, H.; Schlögl, R.: Upper critical field study of alkali-metal and Ba-doped fullerenes. Synthetic Metals 77 (1-3), S. 23 - 25 (1996)

Wohlers, M.; Werner, H.; Herein, D.; Schedel-Niedrig, T.; Bauer, A.; Schlögl, R.: Reaction of C₆₀ and C₇₀ with molecular oxygen. Synthetic Metals 77 (1-3), S. 299 - 302 (1996)

Böhm, M. C.; Schedel-Niedrig, T.; Werner, H.; Schlögl, R.; Schulte, J.; Schütt, J.: Electronic Structure of the C₆₀ Fragment in Alkali- and Alkaline-earth-doped Fullerides. Zeitschrift für Naturforschung, A: Physical Sciences 51 (4), S. 283 - 298 (1996)

Belz, T.; Werner, H.; Zemlin, F.; Klengler, U.; Wesemann, M.; Tesche, B.; Zeitler, E.; Reller, A.; Schlögl, R.: On the Mechanism of Fullerene Formation. Angewandte Chemie International Edition 33 (18), S. 1866 - 1869 (1994)

Belz, T.; Werner, H.; Zemlin, F.; Klengler, U.; Wesemann, M.; Tesche, B.; Zeitler, E.; Reller, A.; Schlögl, R.: Zum Mechanismus der Bildung von Fullerenen. Angewandte Chemie 106 (18), S. 1919 - 1922 (1994)

Mack, S.; Baumann, H.; Werner, H.; Schlögl, R.: Comparison of the gas release at a hydrophobic and a hydrophilic direct bonding interface. In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications, S. 299 - 306 (Hg. Gösele, U.). Electrochemical Society, Pennington, NJ (1998)