Publications of Martina Heinemann

Ourmazd, A.; Scheffler, M.; Heinemann, M.; Rouviere, J.-L.: Microscopic Properties of Thin Films: Learning About Point Defects. MRS Bulletin 17, pp. 24 - 31 (1992)

Heinemann, M.; Scheffler, M.: Formation energies and abundances of intrinsic point defects at the GaAs/AlAs(100) interface. Applied Surface Science 56-58, pp. 628 - 631 (1992)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Atomic and electronic structures of GaAs(110) and their alkali-adsorption-induced changes. Physical Review Letters 67, pp. 1031 - 1034 (1991)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries, Photothresholds, and Schottky-Barrier Heights for Alkalis Adsorbed on GaAs(110). Proc. 20th Int. Conf. on the Physics of Semiconductors (ICPS-20), pp. 215 - 218 (1990)

Hebenstreit, J.; Heinemann, M.; Scheffler, M.: Calculated Surface Geometries and Electronic Structures for Clean and Sodium Covered GaAs(110) Surfaces. Extended Abstract: Electronic, Optical and Device Properties of Layered Structures 21, pp. 71 - 75 (1990)

Heinemann, M.; Scheffler, M.: The formation of a Schottky barrier: Na on GaAs(110). In: Formation of Semiconductor Interfaces, pp. 297 - 300 (Eds. Lengeler, B.; Lüth, H.; Mönch, W.; Pollmann, J.). 4th International Conference on the Formation of Semiconductor Interfaces (ICFSI), Jülich, Germany, June 14, 1993 - June 18, 1993. World Scientific, Singapore (1994)

Heinemann, M.: Elektronische und atomare Struktur von GaAs/AlAs-Grenzflächen. Dissertation, TU, Berlin (1991)