Publikationen von Matthias Scheffler
Alle Typen
Zeitschriftenartikel (591)
561.
Zeitschriftenartikel
160 (2), S. 467 - 474 (1985)
The adsorption of sulphur on Pd(111). I: A LEED analysis of the (sqrt{2} x sqrt{3}) R 30° adsorbate structure. Surface scienc 562.
Zeitschriftenartikel
No large lattice relaxations around the arsenic antisite in GaAs. Proc. 17th Int. Conf. on the Physics of Semiconductors, S. 755 - 760 (1985)
563.
Zeitschriftenartikel
Electronic structure calculation of 3d-transition metal point defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors, S. 129 (1985)
564.
Zeitschriftenartikel
55, S. 1498 - 1501 (1985)
Theoretical evidence for low-spin ground states of early interstitial and late substitutional 3d transition-metal ions in silicon. Physical Review Letters 565.
Zeitschriftenartikel
46, S. 117 (1985)
Identifiaction of chalcogen defects in silicon. Microscopic Identification of Electronic Defects in Semiconductors 566.
Zeitschriftenartikel
54, S. 2525 - 2528 (1985)
Identification of chalcogen point-defects sites in silicon by total-energy calculations. Physical Review Letters 567.
Zeitschriftenartikel
38, S. 403 - 413 (1985)
Calculation of the Green's function for a crystal surface or interface. Comput. Phys. Commun. 568.
Zeitschriftenartikel
54, S. 1333 - 1333 (1985)
As_Ga-induced dichroism in GaAs. Physical Review Letters 569.
Zeitschriftenartikel
14a, S. 45 - 58 (1985)
Chemical bonding and lattice relaxations of deep-level defects. J. of Electronic Materials 570.
Zeitschriftenartikel
31, S. 6541 - 6551 (1985)
Total-energy gradients and lattice distortions at point defects in semiconductors. Physical Review B 571.
Zeitschriftenartikel
29, S. 692 - 702 (1984)
Angle-resolved photoemission and the electronic structure of Pd(111). Physical Review B 572.
Zeitschriftenartikel
52, S. 851 - 854 (1984)
Optical properties of As antisite and EL2 defects in GaAs. Physical Review Letters 573.
Zeitschriftenartikel
29, S. 3269 - 3282 (1984)
Electronic structure and identification of deep defects in GaP. Physical Review B 574.
Zeitschriftenartikel
116, S. 18 - 27 (1983)
Multivacancies, interstitials, and self-interstitial migration in Si. Physica B 575.
Zeitschriftenartikel
117/118, S. 137 - 139 (1983)
Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors. Physica B/C 576.
Zeitschriftenartikel
26 (10), S. 5706 - 5715 (1982)
Electronic structure of deep sp-bonded impurities in silicon. Physical Review B 577.
Zeitschriftenartikel
49, S. 1765 - 1768 (1982)
Tractable approach for calculating lattice distortions around simple defects in semiconductors: Application to the single donor Ge in GaP. Physical Review Letters 578.
Zeitschriftenartikel
15, S. L645 - L650 (1982)
Determination of deep donor binding energies from their g-values. Journal of Physics C: Solid State Physics 579.
Zeitschriftenartikel
47, S. 413 (1981)
Identification and properties of native defects in GaP. Physical Review Letters 580.
Zeitschriftenartikel
Photoemission and the electronic structure of a c(2x2) sulfur adsorbate-layer on Pd. Proceedings of the 4th International Conference on Solid Surfaces and the 3rd European Conf. on Surf. Sci. (1980)